A. Ajmera

发表

Partially-depleted SOI technology for digital logic

E. Leobandung, G.G. Shahidi, F. Assaderaghi, 1999, 1999 IEEE International Solid-State Circuits Conference. Digest of Technical Papers. ISSCC. First Edition (Cat. No.99CH36278).

Scalability of SOI technology into 0.13 /spl mu/m 1.2 V CMOS generation

M. Sherony, J. Sleight, G. Shahidi, 1998, International Electron Devices Meeting 1998. Technical Digest (Cat. No.98CH36217).

High performance sub-40 nm CMOS devices on SOI for the 70 nm technology node

S. Narasimha, N. Zamdmer, J. Bruley, 2001, International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224).

Gate length scaling accelerated to 30 nm regime using ultra-thin film PD-SOI technology

Woo-Hyeong Lee, S.K.H. Fung, P. Agnello, 2001, International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224).

Fully-depleted-collector polysilicon-emitter SiGe-base vertical bipolar transistor on SOI

P. Oldiges, T. Ning, A. Ajmera, 2002, 2002 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.01CH37303).

A 7.9/5.5 psec room/low temperature SOI CMOS

E. Leobandung, L. Wagner, F. Assaderaghi, 1997, International Electron Devices Meeting. IEDM Technical Digest.

Body voltage and history effect sensitivity to key device parameters in 90 nm PD-SOI

M. Sherony, S. Narasimha, Y. Kohyama, 2004, 2004 IEEE International SOI Conference (IEEE Cat. No.04CH37573).

Mainstreaming of the SOI technology

M. Sherony, E. Leobandung, D. Moy, 1999, 1999 IEEE International SOI Conference. Proceedings (Cat. No.99CH36345).

65nm cmos technology for low power applications

M. Sherony, T. Schiml, A. Cowley, 2005, IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest..

Optimization of the germanium preamorphization conditions for shallow-junction formation

Carlton M. Osburn, Eric C. Frey, Mehmet C. Öztürk, 1988 .

80 nm polysilicon gated n-FETs with ultra-thin Al/sub 2/O/sub 3/ gate dielectric for ULSI applications

A. Mocuta, R. Arndt, A. Ajmera, 2000, International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138).