J. Bokor

Complementary silicide source/drain thin-body MOSFETs for the 20 nm gate length regime

C. Hu, J. Kedzierski, E. Anderson, 2000, International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138).

Hydrogen annealing effect on DC and low-frequency noise characteristics in CMOS FinFETs

J. Bokor, Tsu-Jae King, J. Bokor, 2003, IEEE Electron Device Letters.

Sub-20 nm CMOS FinFET technologies

Chenming Hu, N. Lindert, Tsu-Jae King, 2001, International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224).

Ultra-thin body SOI MOSFET for deep-sub-tenth micron era

Chenming Hu, Tsu-Jae King, N. Lindert, 1999, International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318).

FinFET process refinements for improved mobility and gate work function engineering

J. Bokor, Leland Chang, Tsu-Jae King, 2002, Digest. International Electron Devices Meeting,.

A bulk-Si-compatible ultrathin-body SOI technology for sub-100 nm MOSFETs

J. Kedzierski, T. King, J. Bokor, 1999, 1999 57th Annual Device Research Conference Digest (Cat. No.99TH8393).