A. Affolder

Measurements of charge collection efficiency with microstrip detectors made on various substrates after irradiations with neutrons and protons with different energies

P. Allport, G. Casse, A. Affolder, 2008 .

Enhanced efficiency of segmented silicon detectors of different thicknesses after proton irradiations up to 1×1016 neq cm2

P. Allport, G. Casse, A. Affolder, 2010 .

Development of n-on-p silicon sensors for very high radiation environments

I. Gorelov, K. Hara, S. Seidel, 2011 .

Testing of Bulk Radiation Damage of n-in-p Silicon Sensors for Very High Radiation Environments

Kazuhiko Hara, Z. Li, K. Hara, 2010 .

Evaluation of Floating Zone and Epitaxial Planar Silicon Detectors With Different Substrate Thickness After Irradiation up to $2\times 10^{16}$ ${\rm n}_{\rm eq}$ cm$^{- 2}$

G. Casse, P. Allport, G. Casse, 2009, IEEE Transactions on Nuclear Science.

Evaluation of Floating Zone and Epitaxial Planar Silicon Detectors With Different Substrate Thickness After Irradiation up to cm

P. Allport, G. Casse, A. Affolder, 2009 .

Study of the response to minimum ionising particles of microstrip detectors made with float zone and magnetic Czochralski silicon after neutron irradiation

P. Allport, G. Casse, A. Affolder, 2009 .