B. Meinerzhagen

发表

Quasi-simultaneous solution method: A new highly efficient strategy for numerical MOST simulations

W.L. Engl, B. Meinerzhagen, H.K. Dirks, 1985, IEEE Transactions on Electron Devices.

W.L. Engl, B. Meinerzhagen, H.K. Dirks, 1983, Proceedings of the IEEE.

A Convergence Enhancement Method for Deterministic Multisubband Device Simulations of Double Gate PMOSFETs

C. Jungemann, B. Meinerzhagen, A. T. Pham, 2009, 2009 International Conference on Simulation of Semiconductor Processes and Devices.

The influence of the thermal equilibrium approximation on the accuracy of classical two-dimensional numerical modeling of silicon submicrometer MOS transistors

W. L. Engl, B. Meinerzhagen, B. Meinerzhagen, 1988 .

A robust curve tracing scheme for the simulation of bipolar breakdown characteristics with nonlocal impact ionization models

B. Neinhus, B. Meinerzhagen, S. Decker, 1999, 29th European Solid-State Device Research Conference.

Hierarchical 2D RF noise simulation of Si and SiGe devices by Langevin-type DD and, HD models based on MC generated noise parameters

C. Jungemann, B. Neinhus, B. Meinerzhagen, 2001, International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224).

A K-band high gain, low noise figure LNA using 0.13 μm logic CMOS technology

P. Sakalas, B. Meinerzhagen, J. Dang, 2015, 2015 10th European Microwave Integrated Circuits Conference (EuMIC).

HOLE TRANSPORT IN STRAINED SI1-XGEX ALLOYS ON SI1-YGEY SUBSTRATES

F. M. Bufler, B. Meinerzhagen, B. Meinerzhagen, 1998 .

A CPU Efficient Electron Mobility Model for MOSFET Simulation with Quantum Corrected Charge Densities

C. Jungemann, B. Neinhus, B. Meinerzhagen, 2000, 30th European Solid-State Device Research Conference.

A stable CMOS current reference based on the ZTC operating point

B. Meinerzhagen, Y. Wenger, B. Meinerzhagen, 2017, 2017 13th Conference on Ph.D. Research in Microelectronics and Electronics (PRIME).

Do hot electrons produce excess noise?

C. Jungemann, B. Meinerzhagen, C. Jungemann, 2005, Proceedings of 35th European Solid-State Device Research Conference, 2005. ESSDERC 2005..

Noise Analysis for a SiGe HBT by Hydrodynamic Device Simulation

C. Jungemann, B. Meinerzhagen, C. Jungemann, 2002, 32nd European Solid-State Device Research Conference.

Consistent gate and substrate current modeling based on energy transport and the lucky electron concept

B. Meinerzhagen, 1988, Technical Digest., International Electron Devices Meeting.

Hydrodynamic modeling of RF noise in CMOS devices

L.F. Tiemeijer, C. Jungemann, B. Neinhus, 2003, IEEE International Electron Devices Meeting 2003.

Modeling of piezoresistive coefficients in Si hole inversion layers

C. Jungemann, B. Meinerzhagen, A. T. Pham, 2009, 2009 10th International Conference on Ultimate Integration of Silicon.

Comparison of strained SiGe heterostructure-on-insulator (001) and (110) PMOSFETs: C - V characteristics, mobility, and ON current

C. Jungemann, B. Meinerzhagen, C. Jungemann, 2010, 2010 Proceedings of the European Solid State Device Research Conference.

Influence of heat flux on the accuracy of hydrodynamic models for ultra-short Si MOSFETs

I. Bork, C. Jungemann, B. Meinerzhagen, 1994, Proceedings of International Workshop on Numerical Modeling of processes and Devices for Integrated Circuits: NUPAD V.