Akram A. Salman

发表

Double gate (DG)-SOI ratioed logic with symmetric DG load––a novel approach for sub 50 nm low-voltage/low-power circuit design

Souvick Mitra, Akram A. Salman, D. P. Ioannou, 2004 .

Improved inductive-system-level IEC ESD performance for automotive applications using mutual ballasted ESD protection technique

Akram A. Salman, Farzan Farbiz, Ann Concannon, 2016, Microelectron. Reliab..

Multi-reflection TLP: A new measurement technique for system-level automotive ESD/EMC characterization

Akram A. Salman, Farzan Farbiz, 2014, Electrical Overstress/Electrostatic Discharge Symposium Proceedings 2014.

Device physics considerations for SOI domino circuit design

Souvick Mitra, Akram A. Salman, N. Subba, 2001 .

Current Filament Dynamics Under ESD Stress in High Voltage (Bidirectional) SCRs and It's Implications on Power Law Behavior

Akram A. Salman, Gianluca Boselli, Mayank Shrivastava, 2019, 2019 IEEE International Reliability Physics Symposium (IRPS).

Design and optimization of the SOI field effect diode (FED) for ESD protection

Akram A. Salman, Yang Yang, Dimitris E. Ioannou, 2008 .

Field effect diode for effective CDM ESD protection in 45 nm SOI technology

Akram A. Salman, Robert W. Dutton, Mario M. Pelella, 2009, 2009 IEEE International Reliability Physics Symposium.

Novel techniques to modulate the holding voltage in high voltage ESD protections

Akram A. Salman, Farzan Farbiz, Gianluca Boselli, 2011, EOS/ESD Symposium Proceedings.

SOI Field-Effect Diode DRAM Cell: Design and Operation

Akram A. Salman, Qiliang Li, Yang Yang, 2013, IEEE Electron Device Letters.

Physical Insights into the Low Current ESD Failure of LDMOS-SCR and its Implication on Power Scalability

Akram A. Salman, Gianluca Boselli, Mayank Shrivastava, 2019, 2019 IEEE International Reliability Physics Symposium (IRPS).

Design Insights to Address Low Current ESD Failure and Power Scalability Issues in High Voltage LDMOS-SCR Devices

Akram A. Salman, Gianluca Boselli, Mayank Shrivastava, 2020, 2020 IEEE International Reliability Physics Symposium (IRPS).

State-of-the-art ESD protection devices and techniques for digital and analog technologies

Akram A. Salman, Farzan Farbiz, Aravind Appaswamy, 2016, 2016 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S).

Mutual ballasting: A novel technique for improved inductive system level IEC ESD stress performance for automotive applications

Akram A. Salman, Farzan Farbiz, Ann Concannon, 2013, 2013 35th Electrical Overstress/Electrostatic Discharge Symposium.

Gate-controlled field-effect diodes and silicon-controlled rectifier for charged-device model ESD protection in advanced SOI technology

Akram A. Salman, Jung-Hoon Chun, Robert W. Dutton, 2011, Microelectron. Reliab..

Electrostatic discharge induced oxide breakdown characterization in a 0.1 /spl mu/m CMOS technology

Akram A. Salman, Dimitris E. Ioannou, Mujahid Muhammad, 2002, 2002 IEEE International Reliability Physics Symposium. Proceedings. 40th Annual (Cat. No.02CH37320).

NMOSFET ESD self-protection strategy and underlying failure mechanism in advanced 0.13-/spl mu/m CMOS technology

Akram A. Salman, R. Gauthier, Dimitris E. Ioannou, 2002 .

Characterization and investigation of the interaction between hot electron and electrostatic discharge stresses using NMOS devices in 0.13 /spl mu/m CMOS technology

Akram A. Salman, Dimitris E. Ioannou, Kai Esmark, 2001, 2001 IEEE International Reliability Physics Symposium Proceedings. 39th Annual (Cat. No.00CH37167).

ESD-induced oxide breakdown on self-protecting GG-nMOSFET in 0.1-/spl mu/m CMOS technology

Akram A. Salman, Dimitris E. Ioannou, Mujahid Muhammad, 2003 .

Reliability challenges of high performance PD SOI CMOS with ultra-thin gate dielectrics

Akram A. Salman, Niraj Subba, J. Zhang, 2004 .

Engineering optimal high current characteristics of high voltage DENMOS

Akram A. Salman, G. Boselli, M. Dissegna, 2012, 2012 IEEE International Reliability Physics Symposium (IRPS).