P. Zuber

Variability and technology aware SRAM Product yield maximization

A. Mercha, P. Roussel, D. Verkest, 2011, 2011 Symposium on VLSI Technology - Digest of Technical Papers.

Atomistic approach to variability of bias-temperature instability in circuit simulations

G. Groeseneken, B. Kaczer, T. Grasser, 2011, 2011 International Reliability Physics Symposium.

Circuit-design oriented modelling of the recovery BTI component and post-BD gate currents

G. Groeseneken, B. Kaczer, B. Dierickx, 2009, 2009 Spanish Conference on Electron Devices.

Impact of fin height variations on SRAM yield

D. Verkest, T. Chiarella, N. Horiguchi, 2012, Proceedings of Technical Program of 2012 VLSI Technology, System and Application.