Mayumi Hirose

A Buried-Channel Self-Aligned GaAs MESFET with High Power-Efficiency and Low Noise-Figure for 1.9-GHz SIngle-CHip Front-End MMICs

Atsushi Kameyama, Masakatsu Mihara, Misao Yoshimura, 1997 .

A possible scaling limit for enhancement-mode GaAs MESFETs in DCFL circuits

Mayumi Hirose, N. Uchitomi, 1992 .

An improved two-dimensional simulation model (MEGA) for GaAs MESFET applicable to LSI design

Nobuyuki Toyoda, Mayumi Hirose, Jiro Yoshida, 1988, IEEE Trans. Comput. Aided Des. Integr. Circuits Syst..

AlGaN/GaN HEMTのDCストレスによる信頼性評価(半導体表面・界面制御・評価と電子デバイスの信頼性)

津田 邦男, Takuma Suzuki, 川崎 久夫, 2007 .

A large-signal model of self-aligned gate GaAs FETs for high-efficiency power amplifier design

Yoshiaki Kitaura, Mayumi Hirose, N. Uchitomi, 1999, IMS 1999.

A self-aligned gate GaAs MESFET with p-pocket layers for high-efficiency linear power amplifiers

Masakatsu Mihara, Masami Nagaoka, Yoshiaki Kitaura, 1998 .

Numerical analysis of a cylindrical thin-pillar transistor (CYNTHIA)

Fujio Masuoka, S. Miyano, Mayumi Hirose, 1992 .

Structure dependence of the short‐channel effect in GaAs MESFETs. Two‐dimensional device simulation

Yasuo Ikawa, Nobuyuki Toyoda, Mayumi Hirose, 1988 .

A GaAs direct-conversion 1/4/spl pi/ shifted QPSK modulator IC with 0-28 dB variable attenuator for 1.9 GHz personal handy phone system

A. Kameyama, S. Otaka, Yoshiaki Kitaura, 1995, GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995.

C-band AIGaN/GaN HEMTs with 170W Output Power

Takuma Suzuki, Takashi Suzuki, Hisao Kawasaki, 2005 .