Timothy D. Sullivan

发表

Deep-censoring method for early reliability assessment

Harry A. Schafft, Linda M. Head, J. A. Lechner, 2000, 2000 IEEE International Integrated Reliability Workshop Final Report (Cat. No.00TH8515).

Microelectronics BEOL reliability basics and evolution

Timothy D. Sullivan, 2012 .

Electromigration and stress-induced voiding in fine Al and Al-alloy thin-film lines

Kim Y. Lee, Chao-Kun Hu, Kenneth P. Rodbell, 1995, IBM J. Res. Dev..

Charging DamageandProduct ImpactinaBulkCMOS Technology

Timothy D. Sullivan, Charles F. Musante, 2006 .

IEEE Catalog Number 00TH8515

Harry A. Schafft, Linda M. Head, J. A. Lechner, 2000 .

Early reliability assessment by using deep censoring

Harry A. Schafft, Linda M. Head, Timothy D. Sullivan, 2003, Microelectron. Reliab..

IBM experiments in soft fails in computer electronics (1978-1994)

James L. Walsh, Huntington W. Curtis, James F. Ziegler, 1996, IBM J. Res. Dev..

Modeling stress-induced void growth in Al-4wt%Cu lines

Timothy D. Sullivan, Stewart E. Rauch, 1993, Other Conferences.

Application of three-parameter lognormal distribution in EM data analysis

Emmanuel Yashchin, Cathryn Christiansen, Baozhen Li, 2006, Microelectron. Reliab..

Electric vehicles and natural disaster policy implications

Timothy D. Sullivan, Shawn A. Adderly, Daria Manukian, 2018 .

Stress-induced voiding in aluminum alloy metallizations

James G. Ryan, Timothy D. Sullivan, Dennis P. Bouldin, 1991, Other Conferences.

Reliability challenges for copper interconnects

Baozhen Li, Timothy D. Sullivan, Dinesh Badami, 2004, Microelectron. Reliab..

Threshold electromigration failure time and its statistics for Cu interconnects

Emmanuel Yashchin, Baozhen Li, Ronald G. Filippi, 2006 .

Reliability considerations for copper metallizations in ULSI circuits

Timothy D. Sullivan, T. Sullivan, 1999 .

Electromigration Damage by Current Induced Coalescence of Thermal Stress Voids

Peter Borgesen, Timothy D. Sullivan, D. D. Brown, 1991 .

Piezoelectric polymer flexural disk hydrophone

Timothy D. Sullivan, James M. Powers, T. Sullivan, 1978 .

Thermal conductance of IC interconnects embedded in dielectrics

Timothy D. Sullivan, Jason P. Gill, D. Harmon, 1998, 1998 IEEE International Integrated Reliability Workshop Final Report (Cat. No.98TH8363).

Line depletion electromigration characterization of Cu interconnects

Baozhen Li, Timothy D. Sullivan, Tom C. Lee, 2004 .

Reliability challenges for advanced copper interconnects: Electromigration and time-dependent dielectric breakdown (TDDB)

Fen Chen, Jeffrey P. Gambino, Timothy D. Sullivan, 2009, 2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits.

Thermal dependence of voiding in narrow aluminum microelectronic interconnects

Timothy D. Sullivan, 1989 .

Basic BEOL parameters from isothermal wafer level electromigration testing

Timothy D. Sullivan, D. Tibel, T. Sullivan, 2000, 2000 IEEE International Integrated Reliability Workshop Final Report (Cat. No.00TH8515).

Reliability Wearout Mechanisms in Advanced CMOS Technologies

Jordi Suñé, Ernest Y. Wu, Timothy D. Sullivan, 2009 .

The effect of current density, stripe length, stripe width, and temperature on resistance saturation during electromigration testing

Robert Rosenberg, Ronald G. Filippi, Richard A. Wachnik, 2002 .

Electromigration in aluminum damascene lines

Terence Kane, Ronald G. Filippi, Kenneth P. Rodbell, 1999 .

Influence of underlying interlevel dielectric films on extrusion formation in aluminum interconnects

Baozhen Li, Fen Chen, James Kolodzey, 2000 .

Stress‐migration related electromigration damage mechanism in passivated, narrow interconnects

Timothy D. Sullivan, T. Sullivan, P. Bo, 1991 .

The effects of alloying on stress induced void formation in aluminum‐based metallizations

James G. Ryan, Timothy D. Sullivan, Dennis P. Bouldin, 1990 .