Wen Chao Shen

Electron trapping effect on the switching behavior of contact RRAM devices through random telegraph noise analysis

Chia-En Huang, Ya-Chin King, Chrong Jung Lin, 2010, 2010 International Electron Devices Meeting.

High-K metal gate contact RRAM (CRRAM) in pure 28nm CMOS logic process

Ming-Jinn Tsai, Ya-Chin King, Shyh-Shyuan Sheu, 2012, 2012 International Electron Devices Meeting.

Memristor Logic Operation Gate With Share Contact RRAM Cell

Chrong Jung Lin, Y.-D Chih, Yuan Heng Tseng, 2011, IEEE Electron Device Letters.

A Contact-Resistive Random-Access-Memory-Based True Random Number Generator

Ya-Chin King, Wen Chao Shen, Chrong-Jung Lin, 2012, IEEE Electron Device Letters.

New High-Density Differential Split Gate Flash Memory With Self-Boosting Function

Yue-Der Chih, Chrong Jung Lin, Ya-Chin King, 2013, IEEE Electron Device Letters.

28-nm 2T High-$K$ Metal Gate Embedded RRAM With Fully Compatible CMOS Logic Processes

Frederick T. Chen, Ming-Jinn Tsai, Yue-Der Chih, 2013, IEEE Electron Device Letters.

A novel high-density embedded AND-type split gate flash memory

Ya-Chin King, Chrong Jung Lin, Chiu-Wang Lien, 2014 .

Modeling of electron conduction in contact resistive random access memory devices as random telegraph noise.

Chrong Jung Lin, Yuan Heng Tseng, Wen Chao Shen, 2012, Journal of applied physics.