T. Pompl

Ultra-thin gate oxide reliability in the ESD time domain

A. Bravaix, K. Esmark, T. Brodbeck, 2006, 2006 Electrical Overstress/Electrostatic Discharge Symposium.

Highly accurate product-level aging monitoring in 40nm CMOS

C. Pacha, H. Reisinger, K. Hofmann, 2010, 2010 Symposium on VLSI Technology.

Failure distributions of successive dielectric breakdown events

M. Kerber, T. Pompl, 2004, IEEE Transactions on Device and Materials Reliability.

Change of acceleration behavior of time-dependent dielectric breakdown by the BEOL process: indications for hydrogen induced transition in dominant degradation mechanism

T. Pompl, K.-H. Allers, R. Schwab, 2005, 2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual..

Long term gate dielectric stress -- a timely method?

R.-P. Vollertsen, A. Kerber, T. Pompl, 2006, 2006 International Electron Devices Meeting.