Jérôme Faist

Intersubband electroluminescence from silicon-based quantum cascade structures.

G. Dehlinger, J. Faist, K. Ensslin, 2000, Science.

Excess carrier lifetimes in Ge layers on Si

J. Faist, R. Spolenak, M. Süess, 2014 .

Top-down fabricated silicon nanowires under tensile elastic strain up to 4.5%

J Gobrecht, J. Faist, K. Bourdelle, 2012, Nature Communications.

Far-infrared quantum cascade lasers operating in AlAs phonon Reststrahlen band

M. Beck, J. Faist, M. Süess, 2016, 1609.08196.