Joerg Appenzeller

Electric field control of interaction between magnons and quantum spin defects

P. Upadhyaya, Punyashloka Debashis, S. Bogdanov, 2022 .

Comparing carbon nanotube transistors - the ideal choice: a novel tunneling device design

J. Appenzeller, J. Knoch, P. Avouris, 2005, IEEE Transactions on Electron Devices.

Tailoring amorphous boron nitride for high-performance two-dimensional electronics

Zheng Sun, Joshua A Robinson, Zhihong Chen, 2024, Nature communications.

Tailoring Amorphous Boron Nitride for High-Performance 2D Electronics

Engineering, School of Electrical, Computer Engineering, 2023, 2312.09136.

High-Performance Complementary Circuits from Two-Dimensional MoTe2.

Jing Kong, Peng Wu, Zheng Sun, 2023, Nano letters.

Carbon nanotubes as schottky barrier transistors.

R Martel, J. Tersoff, J. Appenzeller, 2002, Physical review letters.

Ternary Content-Addressable Memory Based on a Single Two-Dimensional Transistor for Memory-Augmented Learning.

Jing Kong, Peng Wu, Zhihong Chen, 2024, ACS nano.