R. Kern

发表

Effect of Si doping on strain, cracking, and microstructure in GaN thin films grown by metalorganic chemical vapor deposition

Joel W. Ager, C. Walle, L. Romano, 2000 .

Effects of gas flow ratio on silicon carbide thin film growth mode and polytype formation during gas-source molecular beam epitaxy

R. Davis, Satoru Tanaka, R. S. Kern, 1994 .

Homoepitaxial SiC Growth by Molecular Beam Epitaxy

R. Davis, Satoru Tanaka, K. Järrendahl, 1997 .

INITIAL STAGE OF ALUMINUM NITRIDE FILM GROWTH ON 6H-SILICON CARBIDE BY PLASMA-ASSISTED, GAS-SOURCE MOLECULAR BEAM EPITAXY

Robert F. Davis, R. Scott Kern, Satoru Tanaka, 1995 .

Hall-effect characterization of III–V nitride semiconductors for high efficiency light emitting diodes

Robert M. Fletcher, R. Fletcher, D. Steigerwald, 1999 .

Vicinal and on-axis surfaces of 6H-SiC(0001) thin films observed by scanning tunneling microscopy

R. Davis, Satoru Tanaka, J. Wendelken, 1996 .

Reaction kinetics of silicon carbide deposition by gas-source molecular-beam epitaxy

R. Davis, L. Rowland, Satoru Tanaka, 1998 .

Growth of SiC and III–V nitride thin films via gas-source molecular beam epitaxy and their characterization

R. Davis, L. Rowland, Satoru Tanaka, 1996 .

Electrical characteristics of metal/AlN/n‐type 6H–SiC(0001) heterostructures

R. Davis, Satoru Tanaka, R. S. Kern, 1996 .

Initial Stages of Growth of Thin Films of III-V Nitrides and Silicon Carbide Polytypes by Molecular Beam Epitaxy

R. Davis, Satoru Tanaka, R. S. Kern, 1994 .

Chapter 3 High-Brightness Nitride-Based Visible-Light-Emitting Diodes

R. Fletcher, C. Kuo, W. Götz, 1999 .

Epitaxial growth of AlN by plasma-assisted, gas-source molecular beam epitaxy

R. Davis, L. Rowland, R. S. Kern, 1993 .

Microstructural evolution and defect formation during the initial stages of the growth of silicon carbide and aluminum nitride on α(6H)-SiC(0001) substrates

R. Davis, Satoru Tanaka, R. S. Kern, 1996 .

Aluminum nitride/silicon carbide multilayer heterostructure produced by plasma‐assisted, gas‐source molecular beam epitaxy

R. Davis, L. Rowland, Satoru Tanaka, 1993 .

Recent advances in the growth, doping and characterization of III–V nitride thin films

R. Davis, Satoru Tanaka, R. S. Kern, 1996 .

Gas-source molecular beam epitaxy of III–V nitrides

M. Paisley, R. Davis, K. Linthicum, 1997 .

Real‐time assessment of overlayer removal on GaN, AlN, and AlGaN surfaces using spectroscopic ellipsometry

R. Davis, D. Aspnes, R. S. Kern, 1996 .

Growth of AlN and GaN thin films via OMVPE and gas source MBE and their characterization

R. Davis, Satoru Tanaka, R. S. Kern, 1997 .

Issues and Examples Regarding Growth of AlN, GaN and Al x Ga 1−x N Thin Films via OMVPE and Gas Source MBE

R. Davis, Satoru Tanaka, R. S. Kern, 1995 .

III–V Nitride semiconductors for high-performance blue and green light-emitting devices

Serge Rudaz, R. Fletcher, D. Steigerwald, 1997 .

Gas-source molecular beam epitaxy of monocrystalline β–SiC on vicinal α(6H)–SiC

R. Davis, L. Rowland, Satoru Tanaka, 1993 .

Layer-by-layer growth of SiC at low temperatures

R. Davis, L. Rowland, Satoru Tanaka, 1993 .

Recombination dynamics in InGaN quantum wells

Yoon-Kyu Song, Arto V. Nurmikko, C. P. Kuo, 1996 .

Growth and doping via gas-source molecular beam epitaxy of SiC and heterostructures and their microstructural and electrical characterization

R. Davis, Satoru Tanaka, K. Järrendahl, 1997 .

Silicon carbide for high-temperature microelectronics: recent advances in material growth via gas source MBE and device research

R. Davis, R. Kern, 1997 .

Performance of high-power AlInGaN light emitting diodes

S. A. Stockman, Paul S. Martin, Nathan F. Gardner, 2001 .

High-power AlGaInN flip-chip light-emitting diodes

Michael R. Krames, S. A. Stockman, Paul S. Martin, 2001 .