Yoshihito Katsu

Impact of NO Annealing on Flatband Voltage Instability due to Charge Trapping in SiС MOS Devices

T. Kimoto, Heiji Watanabe, T. Shimura, 2016 .

Improved channel mobility of 4H-SiC n-MOSFETs by ultrahigh-temperature gate oxidation with low-oxygen partial-pressure cooling

Heiji Watanabe, Daisuke Nagai, M. Sometani, 2018, Japanese Journal of Applied Physics.

Ultrahigh-temperature rapid thermal oxidation of 4H-SiC(0001) surfaces and oxidation temperature dependence of SiO2/SiC interface properties

Heiji Watanabe, Daisuke Nagai, M. Sometani, 2016 .

Insight into metal-enhanced oxidation using barium on 4H-SiC surfaces

Heiji Watanabe, T. Shimura, T. Hosoi, 2016 .

Impact of rapid cooling process in ultrahigh-temperature oxidation of 4H-SiC(0001)

Heiji Watanabe, Daisuke Nagai, M. Sometani, 2016 .

Passive–active oxidation boundary for thermal oxidation of 4H-SiC(0001) surface in O2/Ar gas mixture and its impact on SiO2/SiC interface quality

Heiji Watanabe, Daisuke Nagai, M. Sometani, 2018, Applied Physics Express.

Structure and Surface Morphology of Thermal SiO2 Grown on 4H-SiC by Metal-Enhanced Oxidation Using Barium

Heiji Watanabe, T. Shimura, T. Hosoi, 2016, 2016 European Conference on Silicon Carbide & Related Materials (ECSCRM).