Shuhei Mitani

发表

High performance SiC trench devices with ultra-low ron

H. Sakairi, Y. Nakano, M. Aketa, 2011, 2011 International Electron Devices Meeting.

4H-SiC Trench MOSFET with Ultra-Low On-Resistance by Using Miniaturization Technology

K. Tsuruta, S. Mitani, M. Noborio, 2018, Materials Science Forum.

Suppression of Bipolar Degradation in Deep-P Encapsulated 4H-SiC Trench MOSFETs up to Ultra-High Current Density

K. Tsuruta, S. Mitani, M. Noborio, 2019, 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD).

Investigation of unusual mobile ion effects in thermally grown SiO2 on 4H-SiC(0001) at high temperatures

Heiji Watanabe, Y. Nakano, T. Shimura, 2012 .

Relationship between interface property and energy band alignment of thermally grown SiO2 on 4H-SiC(0001)

Heiji Watanabe, Y. Nakano, T. Shimura, 2012 .

Energy Band Structure of SiO2/4H-SiC Interfaces and its Modulation Induced by Intrinsic and Extrinsic Interface Charge Transfer

Akitaka Yoshigoe, Yuden Teraoka, James R. Harries, 2011 .

Dielectric Properties of Thermally Grown SiO2 on 4H-SiC(0001) Substrates

Heiji Watanabe, Y. Nakano, T. Shimura, 2013 .

Improved Characteristics of 4H-SiC MISFET with AlON/Nitrided SiO2 Stacked Gate Dielectrics

Heiji Watanabe, Y. Nakano, S. Mitani, 2010 .

Novel Approach for Improving Interface Quality of 4H-SiC MOS Devices with UV Irradiation and Subsequent Thermal Annealing

Yuki Nakano, Takayoshi Shimura, Takuji Hosoi, 2013 .

(Invited) Gate Stack Technologies for SiC Power MOSFETs

A. Yoshigoe, Y. Teraoka, Heiji Watanabe, 2011 .

Reduction of Charge Trapping Sites in Al2O3/SiO2 Stacked Gate Dielectrics by Incorporating Nitrogen for Highly Reliable 4H-SiC MIS Devices

Heiji Watanabe, Y. Nakano, T. Shimura, 2011 .

Investigation of Surface and Interface Morphology of Thermally Grown SiO2 Dielectrics on 4H-SiC(0001) Substrates

Heiji Watanabe, Y. Nakano, T. Shimura, 2011 .

Direct Observation of Dielectric Breakdown Spot in Thermal Oxides on 4H-SiC(0001) Using Conductive Atomic Force Microscopy

Heiji Watanabe, Y. Nakano, T. Shimura, 2010 .

Deep-P encapsulated 4H-SiC trench MOSFETs with ultra low RonQgd

K. Tsuruta, S. Mitani, M. Noborio, 2018, 2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD).

Impact of UV Irradiation on Thermally Grown 4H-SiC MOS Devices

Yuki Nakano, Takayoshi Shimura, Takuji Hosoi, 2012 .

Impact of Interface Defect Passivation on Conduction Band Offset at SiO2/4H-SiC Interface

Akitaka Yoshigoe, Yuden Teraoka, Yuki Nakano, 2012 .