Martin Hauck

Quantitative Investigation of Near Interface Traps in 4H-SiC MOSFETs via Drain Current Deep Level Transient Spectroscopy

G. Pobegen, M. Hauck, M. Krieger, 2016, 2016 European Conference on Silicon Carbide & Related Materials (ECSCRM).

Aluminum acceptor activation and charge compensation in implanted p-type 4H-SiC

A. Bauer, M. Krieger, T. Erlbacher, 2019, AIP Advances.

On the Origin of Charge Compensation in Aluminum-Implanted n-Type 4H-SiC by Analysis of Hall Effect Measurements

H. Mitlehner, L. Frey, A. Bauer, 2019, Materials Science Forum.

Analysis of Compensation Effects in Aluminum-Implanted 4H-SiC Devices

H. Mitlehner, L. Frey, A. Bauer, 2018, Materials Science Forum.

An adapted method for analyzing 4H silicon carbide metal-oxide-semiconductor field-effect transistors

H. B. Weber, G. Pobegen, M. Krieger, 2019, Communications Physics.

An adapted method for analyzing 4H silicon carbide metal-oxide-semiconductor field-effect transistors

H. B. Weber, G. Pobegen, M. Krieger, 2019, Communications Physics.

On the origin of drain current transients and subthreshold sweep hysteresis in 4H-SiC MOSFETs

H. B. Weber, G. Pobegen, T. Aichinger, 2019, Applied Physics Letters.