Hans Peter Felsl

Thyristors and IGBTs with integrated self-protection functions

Josef Lutz, Franz-Josef Niedernostheide, Hans-Joachim Schulze, 2007, IET Circuits Devices Syst..

An IGBT module and a circuit

Franz-Josef Niedernostheide, Hans Peter Felsl, Hans-Joachim Schulze, 2011 .

Switching ruggedness and surge-current capability of diodes using the self-adjusting p emitter efficiency diode concept

Josef Lutz, Franz-Josef Niedernostheide, Hans-Joachim Schulze, 2014, IET Circuits Devices Syst..

Different types of avalanche-induced moving current filaments under the influence of doping inhomogeneities

Franz-Josef Niedernostheide, S. Milady, D. Silber, 2008, Microelectron. J..

Optimization of the selenium field-stop profile with respect to softness and robustness

Josef Lutz, Franz-Josef Niedernostheide, Thomas Basler, 2014, 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD).

A new diode structure with Inverse injection Dependency of Emitter Efficiency (IDEE)

Josef Lutz, Hans-Joachim Schulze, Ralf Siemieniec, 2010, 2010 22nd International Symposium on Power Semiconductor Devices & IC's (ISPSD).

Comparison of critical current filaments in IGBT short circuit and during diode turn-off

Franz-Josef Niedernostheide, Hans-Joachim Schulze, Frank Pfirsch, 2014, 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD).