Markus Caesar

(Invited) intrinsic reliability assessment of 650V rated AlGaN/GaN based power devices: an industry perspective

Balaji Padmanabhan, Frederick Declercq, Gaudenzio Meneghesso, 2016 .

On the impact of Carbon-doping and channel thickness on the dynamic Ron of 650V GaN power devices

Gaudenzio Meneghesso, Enrico Zanoni, Peter Moens, 2015 .

Electron Trapping in GaN-on-Si Power HEMTs

Gaudenzio Meneghesso, Michael J. Uren, Peter Moens, 2015, ICNS 2015.