Daniel M. Fleetwood

Radiation Effects in MOS Oxides

J.A. Felix, P. Paillet, V. Ferlet-Cavrois, 2008, IEEE Transactions on Nuclear Science.

Fast and slow border traps in MOS devices

D. Fleetwood, Daniel M. Fleetwood, 1995, Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems.

An overview of radiation effects on electronics in the space telecommunications environment

D. Fleetwood, P. Winokur, P. Dodd, 2000 .

Non-volatile memory device based on mobile protons in SiO2 thin films

D. Fleetwood, P. Winokur, J. Schwank, 1997, Nature.

Radiation-Induced Interface-State Generation in MOS Devices

P. S. Winokur, F. W. Sexton, J. R. Schwank, 1986, IEEE Transactions on Nuclear Science.