文
论文分享
演练场
杂货铺
论文推荐
字
编辑器下载
登录
注册
Wolfgang Bergner
发表
1200V SiC Trench-MOSFET Optimized for High Reliability and High Performance
R. Esteve, T. Aichinger, W. Bergner, 2016, 2016 European Conference on Silicon Carbide & Related Materials (ECSCRM).