Qian Lou

Self-Clamped P-shield SiC Trench IGBT for Low On-State Voltage and Switching Loss

Bo Zhang, Xuan Li, Xiaochuan Deng, 2023, 2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD).

Investigation of Inrush Current Induced Trench Gate Degradation Inside SiC Mosfet by New Fowler–Nordheim Localization Methodology

Xuan Li, Xiaochuan Deng, Bo Zhang, 2024, IEEE Transactions on Power Electronics.