Toshiki Hisada

A 19nm 112.8mm2 64Gb multi-level flash memory with 400Mb/s/pin 1.8V Toggle Mode interface

Hong Ding, Manabu Sato, Takeshi Ogawa, 2012, 2012 IEEE International Solid-State Circuits Conference.

A 120mm2 16Gb 4-MLC NAND Flash Memory with 43nm CMOS Technology

Shinji Miyamoto, Frank Tsai, Hiroyuki Otake, 2008, 2008 IEEE International Solid-State Circuits Conference - Digest of Technical Papers.

A 512Gb 3b/Cell 3D flash memory on a 96-word-line-layer technology

Xu Li, Hiroshi Nakamura, Manabu Sato, 2018, 2018 IEEE International Solid - State Circuits Conference - (ISSCC).