Ming-Fu Li

Ming-Fu Li, K. F. Lo, Ming-Fu Li, 1999, Proceedings of the 1999 7th International Symposium on the Physical and Failure Analysis of Integrated Circuits (Cat. No.99TH8394).

RF, DC, and reliability characteristics of ALD HfO/sub 2/-Al/sub 2/O/sub 3/ laminate MIM capacitors for Si RF IC applications

D.S.H. Chan, S.C. Rustagi, Dim-Lee Kwong, 2004, IEEE Transactions on Electron Devices.

A comparison of the selective etching characteristics of conventional and low-temperature-grown GaAs over AlAs by various etching solutions

Tow Chong Chong, Ming-Fu Li, W. S. Lau, 1996 .

Strained Thin-Body p-MOSFET With Condensed Silicon-Germanium Source/Drain for Enhanced Drive Current Performance

Kah-Wee Ang, King-Jien Chui, Yee-Chia Yeo, 2007, IEEE Electron Device Letters.

Effect of Interface Traps and Oxide Charge on Drain Current Degradation in Tunneling Field-Effect Transistors

Ming-Fu Li, N. Singh, G. Lo, 2010, IEEE Electron Device Letters.

Substrate Effects on Resonant Frequency of Silicon-Based RF On-Chip MIM Capacitor

Guo-Qiang Lo, Yong-Zhong Xiong, Dim-Lee Kwong, 2006, IEEE Transactions on Electron Devices.

Analysis of optical gain and threshold current density of wurtzite InGaN/GaN/AlGaN quantum well lasers

Tow Chong Chong, Yee-Chia Yeo, Ming-Fu Li, 1998 .

Investigation of interface traps located at different regions in p-MOS transistors using DCIV technique

Ming-Fu Li, G. Chen, B. B. Jie, 2001, 2001 6th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.01EX443).

Improved cross-coupled quad transconductor cell

Yong Ching Lim, Ming-Fu Li, X. W. Zhang, 2000 .

Extraction of Channel Electron Effective Mobility in InGaAs/Al $_{\bf 2}$O$_{\bf 3}$ n-FinFETs

Peide D. Ye, Ming-Fu Li, Daming Huang, 2013, IEEE Transactions on Nanotechnology.

Evolution of quasi-breakdown in thin gate oxides

Byung Jin Cho, Ming-Fu Li, Ming-Fu Li, 2002 .

Thin body silicon-on-insulator N-MOSFET with silicon-carbon source/drain regions for performance enhancement

Kah-Wee Ang, King-Jien Chui, Yee-Chia Yeo, 2005, IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest..

Alternative surface passivation on germanium for metal-oxide-semiconductor applications with high-k gate dielectric

Albert Chin, D.S.H. Chan, Narayanan Balasubramanian, 2004 .

A comparison of interface trap generation by Fowler-Nordheim electron injection and hot-hole injection using the DCIV method

Wai Kin Chim, Ming-Fu Li, K. F. Lo, 1999, Proceedings of the 1999 7th International Symposium on the Physical and Failure Analysis of Integrated Circuits (Cat. No.99TH8394).

Enhanced Strain Effects in 25-nm Gate-Length Thin-Body nMOSFETs With Silicon–Carbon Source/Drain and Tensile-Stress Liner

Kah-Wee Ang, King-Jien Chui, Yee-Chia Yeo, 2007, IEEE Electron Device Letters.

A thorough study of quasi-breakdown phenomenon of thin gate oxide in dual-gate CMOSFET's

Yandong He, Byung Jin Cho, Ming-Fu Li, 2000 .

Lattice strain analysis of transistor structures with silicon–germanium and silicon–carbon source∕drain stressors

Kah-Wee Ang, King-Jien Chui, Yee-Chia Yeo, 2005 .

Dual Metal Gates with Band-Edge Work Functions on Novel HfLaO High-K Gate Dielectric

Ming-Fu Li, Y.P. Feng, A. Chin, 2006, 2006 Symposium on VLSI Technology, 2006. Digest of Technical Papers..

Spatial Distribution of Charge Traps in a SONOS-Type Flash Memory Using a High- $k$ Trapping Layer

Ming-Fu Li, Won Jong Yoo, Ming-Fu Li, 2007, IEEE Transactions on Electron Devices.

Uniaxial strain effect on the electronic and optical properties of wurtzite GaN-AlGaN quantum-well lasers

Ming-Fu Li, T. C. Chong, T. Chong, 1998 .

n-MOSFET With Silicon–Carbon Source/Drain for Enhancement of Carrier Transport

Kah-Wee Ang, King-Jien Chui, Yee-Chia Yeo, 2007, IEEE Transactions on Electron Devices.

Extraction of Channel Electron Effective Mobility in InGaAs/Al2O3 n-FinFETs

Peide D. Ye, Ming-Fu Li, Shengwei Li, 2013 .

Reliability of High-Mobility InGaAs Channel n-MOSFETs Under BTI Stress

Yi Xuan, Peide D. Ye, Ming-Fu Li, 2013, IEEE Transactions on Device and Materials Reliability.

Carrier Backscattering Characteristics of Strained N-MOSFET Featuring Silicon-Carbon Source/Drain Regions

Kah-Wee Ang, King-Jien Chui, Yee-Chia Yeo, 2006, 2006 European Solid-State Device Research Conference.