D. Rigaud

发表

Overview of the impact of downscaling technology on 1/f noise in p-MOSFETs to 90 nm

A. Hoffmann, D. Sodini, A. Laigle, 2004 .

Low frequency noise in thin film transistors

M. Valenza, D. Rigaud, J. Rhayem, 2002 .

CMOS 1/f noise modelling and extraction of BSIM3 parameters using a new extraction procedure

M. Valenza, J. C. Vildeuil, D. Rigaud, 1999, ICMTS 1999. Proceedings of 1999 International Conference on Microelectronic Test Structures (Cat. No.99CH36307).

Low frequency noise in gate and drain of PHEMT’s and related correlation

M. Valenza, J. C. Vildeuil, D. Rigaud, 2000 .

Coherence between gate- and drain-current fluctuations in MESFET's and MODFET's biased in the ohmic region

L.K.J. Vandamme, D. Rigaud, J.-M. Peransin, 1992 .

CONDUCTION AND 1/F NOISE ANALYSIS IN AMORPHOUS SILICON THIN-FILM TRANSISTORS

T. Ducourant, M. Valenza, D. Rigaud, 1996 .

1/f noise in metal-oxide-semiconductor transistors biased in weak inversion

Alain Hoffmann, M. Valenza, D. Rigaud, 2001 .

Low-frequency noise in III-V high-speed devices

Annick Penarier, C. Delseny, S. Jarrix, 2002 .

A new approach to model d.c. and a.c. characteristics of junction gate field effect transistors

D. Sodini, D. Rigaud, D. Rigaud, 1981 .

Correlation measurement of carrier multiplication noise sources in MOS transistors at low frequencies

M. Valenza, D. Rigaud, 1994 .

Low-frequency noise in low temperature unhydrogenated polysilicon thin film transistors

Olivier Bonnaud, A. Mercha, R. Carin, 2000 .

1/f noise in MODFETs at low drain bias

D. Rigaud, L. Vandamme, D. Rigaud, 1990 .

Analysis of channel noise and threshold voltage in sos-MOS transistors in the temperature range of 77–300 K

A. Touboul, D. Sodini, G. Lecoy, 1980 .

Extraction of the BSIM3 1/f noise parameters in CMOS transistors

M. Valenza, J. C. Vildeuil, D. Rigaud, 1999 .

1/f noise modeling in long channel amorphous silicon thin film transistors

M. Valenza, D. Rigaud, J. Rhayem, 2000 .

1/f Noise in amorphous silicon thin film transistors: effect of scaling down

M. Valenza, D. Rigaud, J. Rhayem, 1999 .

Gate current 1/f noise in GaAs MESFET's

L.K.J. Vandamme, R. Alabedra, D. Rigaud, 1988 .

1/f noise in MOS devices, mobility or number fluctuations?

L.K.J. Vandamme, D. Rigaud, L. Vandamme, 1994 .