Naruhito Iwasa

发表

GaN-based violet laser diodes

Takashi Mukai, Masahiko Sano, Hiroaki Matsumura, 2001, SPIE OPTO.

InGaN/GaN/AlGaN-Based Laser Diodes with Modulation-Doped Strained-Layer Superlattices

Masahiko Sano, Shuji Nakamura, Tokuya Kozaki, 1997 .

INGAN/GAN/ALGAN-BASED LASER DIODES WITH CLEAVED FACETS GROWN ON GAN SUBSTRATES

Masahiko Sano, Shuji Nakamura, Tokuya Kozaki, 1998 .

Hole Compensation Mechanism of P-Type GaN Films

Takashi Mukai, Shuji Nakamura, Naruhito Iwasa, 1992 .

Longitudinal mode spectra and ultrashort pulse generation of InGaN multiquantum well structure laser diodes

Shuji Nakamura, Shin-ichi Nagahama, Toshio Matsushita, 1997 .

Optical gain and carrier lifetime of InGaN multi‐quantum well structure laser diodes

Shuji Nakamura, Shin-ichi Nagahama, Toshio Matsushita, 1996 .

High-Power and Long-Lifetime InGaN Multi-Quantum-Well Laser Diodes Grown on Low-Dislocation-Density GaN Substrates

Takashi Mukai, Masahiko Sano, Hiroaki Matsumura, 2000 .

Violet InGaN/GaN/AlGaN-Based Laser Diodes with an Output Power of 420 mW

Masahiko Sano, Shuji Nakamura, Tokuya Kozaki, 1998 .

Room-temperature continuous-wave operation of InGaN multi-quantum-well-structure laser diodes with a long lifetime

Shuji Nakamura, Shin-ichi Nagahama, Toshio Matsushita, 1997 .

High-Power, Long-Lifetime InGaN/GaN/AlGaN-Based Laser Diodes Grown on Pure GaN Substrates

Masahiko Sano, Shuji Nakamura, Tokuya Kozaki, 1998 .

Superbright Green InGaN Single-Quantum-Well-Structure Light-Emitting Diodes

Takashi Mukai, Shuji Nakamura, S. Nagahama, 1995 .

Ridge‐geometry InGaN multi‐quantum‐well‐structure laser diodes

Shuji Nakamura, Shin-ichi Nagahama, Toshio Matsushita, 1996 .

Blue InGaN-based laser diodes with an emission wavelength of 450 nm

Takashi Mukai, Shuji Nakamura, Shin-ichi Nagahama, 2000 .

SUBBAND EMISSIONS OF INGAN MULTI-QUANTUM-WELL LASER DIODES UNDER ROOM-TEMPERATURE CONTINUOUS WAVE OPERATION

Shuji Nakamura, Shin-ichi Nagahama, Toshio Matsushita, 1997 .

InxGa(1−x)N/InyGa(1−y)N superlattices grown on GaN films

Takashi Mukai, Shuji Nakamura, Shin-ichi Nagahama, 1993 .

InGaN/GaN/AlGaN-Based Laser Diodes Grown on GaN Substrates with a Fundamental Transverse Mode

Masahiko Sano, Shuji Nakamura, Tokuya Kozaki, 1998 .

Characteristics of InGaN multi‐quantum‐well‐structure laser diodes

Shuji Nakamura, Shin-ichi Nagahama, Toshio Matsushita, 1996 .

High‐power InGaN single‐quantum‐well‐structure blue and violet light‐emitting diodes

Shuji Nakamura, Shin-ichi Nagahama, Naruhito Iwasa, 1995 .

InGaN multi‐quantum‐well structure laser diodes grown on MgAl2O4 substrates

Shuji Nakamura, Shin-ichi Nagahama, Toshio Matsushita, 1996 .

High-Power, Long-Lifetime InGaN Multi-Quantum-Well-Structure Laser Diodes

Shuji Nakamura, Toshio Matsushita, S. Nagahama, 1997 .

CONTINUOUS-WAVE OPERATION OF INGAN/GAN/ALGAN-BASED LASER DIODES GROWN ON GAN SUBSTRATES

Masahiko Sano, Shuji Nakamura, Tokuya Kozaki, 1998 .

InGaN Multi-Quantum-Well-Structure Laser Diodes with Cleaved Mirror Cavity Facets

Shuji Nakamura, Toshio Matsushita, S. Nagahama, 1996 .

InGaN/GaN/AlGaN-Based Laser Diodes with Modulation-Doped Strained-Layer Superlattices

Masahiko Sano, Shuji Nakamura, Tokuya Kozaki, 1997 .

Room-temperature continuous-wave operation of InGaN multi-quantum-well structure laser diodes with a lifetime of 27 hours

Shuji Nakamura, Shin-ichi Nagahama, Toshio Matsushita, 1997 .