Rainer Waser

发表

Influence of ReRAM Device Characteristics on the performance of Logic-in-Memory Concepts

Lei Xie, Said Hamdioui, Dirk Wouters, 2017 .

Energy efficient computing by redox-based memristive oxide elements

Rainer Waser, Stephan Menzel, Regina Dittmann, 2016, 2016 IEEE Silicon Nanoelectronics Workshop (SNW).

Opportunities and Problems of Multistate ReRAMs in Passive Crossbar Arrays

Dirk Wouters, Anne Siemon, Rainer Waser, 2017 .

Termination control of SrTiO3 (100) surfaces

Rainer Waser, Silvia Karthäuser, Krzysztof Szot, 2002 .

Elucidation and quantification of valence changes in memristive SrTiO3 devices

Rainer Waser, Hongchu Du, Christoph Bäumer, 2016 .

Function by defects at the atomic scale — New concepts for non-volatile memories

Matthias Wuttig, Rainer Waser, R. Waser, 2009, 2009 Proceedings of the European Solid State Device Research Conference.

Capacitive-resistive nondriven plateline cell architecture for RRAM technology

Rainer Waser, Jakob Mustafa, 2006 .

Decomposition of SrTiO3 induced by electrochemical stress

Gustav Bihlmayer, Rainer Waser, Christian Rodenbücher, 2016 .

Modeling of Quantized Conductance Effects in Electrochemical Metallization Cells

Rainer Waser, Stephan Menzel, Stefan Tappertzhofen, 2015, IEEE Transactions on Nanotechnology.

Comparison of three different architectures for active resistive memories

Rainer Waser, Jakob Mustafa, A. Rüdiger, 2007 .

SET kinetics and I-V characteristics of VCM-based ReRAM cells at high temperatures using a nanometer-sized heater

Rainer Waser, Stephan Menzel, Karsten Fleck, 2017 .

Nanoelectronics and Information Technology: Advanced Electronic Materials and Novel Devices

Rainer Waser, R. Waser, 2003 .

Nanobattery Effect in RRAMs—Implications on Device Stability and Endurance

Rainer Waser, Stefan Tappertzhofen, Ilia Valov, 2014, IEEE Electron Device Letters.

Multi-valued and Fuzzy Logic Realization using TaOx Memristive Devices

Anupam Chattopadhyay, Rainer Waser, Debjyoti Bhattacharjee, 2018, Scientific Reports.

Electrochemical fundamentals and recent developments of atomically scaled memristive devices

Rainer Waser, Stefan Tappertzhofen, Ilia Valov, 2016 .

Storage element memory array and method of operating

Rainer Waser, Eike Linn, Carsten Kügeler, 2009 .

Ion Migration in Amorphous HfOx

Rainer Waser, R. A. De Souza, Martin Salinga, 2016 .

Materials and physics for nonvolatile memories : symposium held April 14-17, 2009, San Francisco, California, U.S.A.

Tingkai Li, Rainer Waser, Yoshihisa Fujisaki, 2009 .

Avalanche-discharge-induced electrical forming in Ta2O5 based MIM stuctures

Joachim Mayer, Rainer Waser, Stephan Menzel, 2016 .

Energy-efficient redox-based non-volatile memory devices and logic circuits

Rainer Waser, Stephan Menzel, Vikas Rana, 2013, 2013 Third Berkeley Symposium on Energy Efficient Electronic Systems (E3S).

High-permittivity temperature independent devices up to 2000c by modified graded thin films

Rainer Waser, R. Slowak, T. Schneller, 2000 .

Tuning the Memory Window of TaOx ReRAM Using the RF Sputtering Power

Rainer Waser, Vikas Rana, Wonjoo Kim, 2021, 2021 IEEE International Symposium on Circuits and Systems (ISCAS).

Modeling of electroceramics—Applications and prospects

Rainer Waser, R. Waser, 1999 .

Low-current operations in 4F2-compatible Ta2O5-based complementary resistive switches

Anne Siemon, Rainer Waser, Stephan Menzel, 2015, Nanotechnology.

Compact Modeling of Complementary Switching in Oxide-Based ReRAM Devices

Rainer Waser, Stephan Menzel, Camilla La Torre, 2019, IEEE Transactions on Electron Devices.

Voltage-time dilemma of pure electronic mechanisms in resistive switching memory cells

Rainer Waser, Ralph K. Cavin, Victor V. Zhirnov, 2010 .

Atomic structure and chemistry of dislocation cores at low-angle tilt grain boundary in SrTiO3 bicrystals

Joachim Mayer, Rainer Waser, Hongchu Du, 2015 .

Introduction to Nanoionic Elements for Information Technology,” in Resistive switching – from fundamental redox-processes to device applications

Daniele Ielmini, Rainer Waser, J. Joshua Yang, 2016 .

Spectroscopic Indications of Tunnel Barrier Charging as the Switching Mechanism in Memristive Devices

Rainer Waser, Stephan Menzel, Regina Dittmann, 2017 .

Method to distinguish ferroelectric from nonferroelectric origin in case of resistive switching in ferroelectric capacitors

Rainer Waser, Hermann Kohlstedt, A. Petraru, 2008 .

Impact of the Counter‐Electrode Material on Redox Processes in Resistive Switching Memories

Rainer Waser, Stefan Tappertzhofen, Ilia Valov, 2014 .

dc Electrical Degradation of Perovskite-Type Titanates: I, Ceramics

Rainer Waser, R. Waser, Tudor Baiatu, 1990 .

Influence of adsorbates on the piezoresponse of KNbO3

Rainer Waser, F. Peter, Jerzy Kubacki, 2006 .

Multidimensional Simulation of Threshold Switching in NbO2 Based on an Electric Field Triggered Thermal Runaway Model

Rainer Waser, Stephan Menzel, Nabeel Aslam, 2016 .

Understanding the Coexistence of Two Bipolar Resistive Switching Modes with Opposite Polarity in Pt/TiO2/Ti/Pt Nanosized ReRAM Devices.

Rainer Waser, Stephan Menzel, Sijung Yoo, 2018, ACS applied materials & interfaces.

Chemical Solution Deposited BaTi03 AND SrTi03 Thin Films With Columnar Microstructure

Susanne Hoffmann, Rainer Waser, Chun-Lin Jia, 1997 .

Effect of RESET Voltage on Distribution of SET Switching Time of Bipolar Resistive Switching in a Tantalum Oxide Thin Film

Rainer Waser, Stephan Menzel, Yoshifumi Nishi, 2015, IEEE Transactions on Electron Devices.

Nanoimprint for future non-volatile memory and logic devices

Rainer Waser, Matthias Meier, Dirk Mayer, 2008 .

Direct hysteresis measurements of single nanosized ferroelectric capacitors contacted with an atomic force microscope

Rainer Waser, Ramamoorthy Ramesh, S. Tiedke, 2001 .

Nanosize ferroelectric oxides – tracking down the superparaelectric limit

Rainer Waser, S. Tiedke, T. Schmitz, 2005 .

Impact of the electroforming process on the device stability of epitaxial Fe-doped SrTiO3 resistive switching cells

Rainer Waser, Regina Dittmann, Paul Meuffels, 2009 .

Integration of resistive switching devices in crossbar structures

Rainer Waser, R. Waser, C. Nauenheim, 2010 .

Redox‐based Resistive Memory

Rainer Waser, Stephan Menzel, Eike Linn, 2014 .

Reversible and irreversible piezoelectric and ferroelectric response in ferroelectric ceramics and thin films

Rainer Waser, Ulrich Böttger, U. Böttger, 2004 .

Effects of ferroelectric fatigue on the piezoelectric properties (d33) of tetragonal lead zirconate titanate thin films

Rainer Waser, Carsten Kügeler, Ulrich Böttger, 2005 .

Critical ReRAM Stack Parameters Controlling Complimentary versus Bipolar Resistive Switching

Dirk Wouters, Rainer Waser, Stephan Menzel, 2015, International Memory Workshop.

Improvement of SET variability in TaOx based resistive RAM devices

Dirk Wouters, Rainer Waser, Alexander Schönhals, 2017, Nanotechnology.

Size effects in ultrathin epitaxial ferroelectric heterostructures

Chang-Beom Eom, Rainer Waser, R. Ramesh, 2004 .

Grain boundaries in dielectric and mixed-conducting ceramics

Rainer Waser, R. Hagenbeck, R. Waser, 2000 .

Phase diagrams and physical properties of single-domain epitaxialPb(Zr1−xTix)O3thin films

Rainer Waser, Hermann Kohlstedt, R. Waser, 2003 .

Proton mobility in SiO 2 thin films and impact of hydrogen and humidity on the resistive switching effect

Rainer Waser, Stefan Tappertzhofen, Ilia Valov, 2011 .

Design and analysis of future memories based on switchable resistive elements

Rainer Waser, Jakob Mustafa, R. Waser, 2006 .

Scaling of the ferroelectric field effect transistor and programming concepts for non-volatile memory applications

Rainer Waser, R. Waser, M. Fitsilis, 2005 .

Investigation of the amorphous to crystalline phase transition of chemical solution deposited Pb(Zr0.3Ti0.7)O3 thin films by soft X-ray absorption and soft X-ray emission spectroscopy

Rainer Waser, Hermann Kohlstedt, A. Petraru, 2008 .

Rate-limiting processes in the fast SET operation of a gapless-type Cu-Ta2O5 atomic switch

Masakazu Aono, Rainer Waser, Ilia Valov, 2013 .

Switching kinetics of electrochemical metallization memory cells.

Rainer Waser, Stephan Menzel, Stefan Tappertzhofen, 2013, Physical chemistry chemical physics : PCCP.

The dielectric response as a function of temperature and film thickness of fiber-textured (Ba,Sr)TiO3 thin films grown by chemical vapor deposition

Rainer Waser, Angus I. Kingon, Stephen K. Streiffer, 1997 .

The influence of copper top electrodes on the resistive switching effect in TiO2 thin films studied by conductive atomic force microscopy

Rainer Waser, Lin Yang, Andreas Ruediger, 2009 .

Morphological and electrical changes in TiO2 memristive devices induced by electroforming and switching

John Paul Strachan, Rainer Waser, Regina Dittmann, 2009 .

Probing Cu doped Ge0.3Se0.7 based resistance switching memory devices with random telegraph noise

Rainer Waser, Hermann Kohlstedt, A. Petraru, 2010 .

Study of electrical and mechanical contribution to switching in ferroelectric/ferroelastic polycrystals

Rainer Waser, Stephen C. Hwang, R. Waser, 2000 .

Resistive Switching Memory: Nanoionic Resistive Switching Memories: On the Physical Nature of the Dynamic Reset Process (Adv. Electron. Mater. 1/2016)

Joachim Mayer, Rainer Waser, Stephan Menzel, 2016 .

Electrical properties of the grain boundaries of oxygen ion conductors: Acceptor-doped zirconia and ceria

Rainer Waser, Xin Guo, R. Waser, 2006 .

Study on the dynamic resistance switching properties of NiO thin films

Rainer Waser, Michael Kund, Ralf Symanczyk, 2010 .

Abnormal bipolar-like resistance change behavior induced by symmetric electroforming in Pt/TiO2/Pt resistive switching cells

Rainer Waser, Doo Seok Jeong, Herbert Schroeder, 2009, Nanotechnology.

Fatigue in PZT Thin Films

Rainer Waser, Eugene I. Shishkin, Ivan Baturin, 2000 .

Ceramic Materials for Electronics; Processing, Properties, and Applications, 2. ed. R. C. Buchanan (Ed.), Marcel Dekker Inc., New York 1991; XII, 532 pp., hardcover, $ 166.75, ISBN 0‐8247‐8194‐5

Rainer Waser, R. Waser, 1992 .

Texture etched Al-doped ZnO: a new material for enhanced light trapping in thin film solar cells

Bernd Rech, Susanne Hoffmann, Rainer Waser, 1997, Conference Record of the Twenty Sixth IEEE Photovoltaic Specialists Conference - 1997.

Reliable fabrication of 3 nm gaps between nanoelectrodes by electron-beam lithography

Rainer Waser, Silvia Karthäuser, Stefan Trellenkamp, 2012, Nanotechnology.

Electrochemical Tantalum Oxide for Resistive Switching Memories

Rainer Waser, Ilia Valov, Kug-Seung Lee, 2017, Advanced materials.

Bond nature of active metal ions in SiO2-based electrochemical metallization memory cells.

Rainer Waser, Stefan Tappertzhofen, Ilia Valov, 2013, Nanoscale.

Processing and electrical properties of Pb (ZrxTi1−x)O3 (x=0.2–0.75) films: Comparison of metallo‐organic decomposition and sol‐gel processes

Rainer Waser, Wolfgang Brand, R. Waser, 1992 .

Nanoarchitectonics for Controlling the Number of Dopant Atoms in Solid Electrolyte Nanodots

Masakazu Aono, Rainer Waser, Ilia Valov, 2018, Advanced materials.

Microstructure of columnar-grained SrTiO_3 and BaTiO_3 thin films prepared by chemical solution deposition

Susanne Hoffmann, Rainer Waser, C. L. Jia, 1998 .

Volatile resistance states in electrochemical metallization cells enabling non-destructive readout of complementary resistive switches

Rainer Waser, Eike Linn, Ilia Valov, 2014, Nanotechnology.

Polarization and lattice strains in epitaxial BaTiO3 films grown by high-pressure sputtering

Rainer Waser, Hermann Kohlstedt, A. Petraru, 2007 .

Unit-cell scale mapping of ferroelectricity and tetragonality in epitaxial ultrathin ferroelectric films.

Rainer Waser, Ramamoorthy Ramesh, Chun-Lin Jia, 2007, Nature materials.

Internal Cell Resistance as the Origin of Abrupt Reset Behavior in HfO2-Based Devices Determined from Current Compliance Series

Rainer Waser, Stephan Menzel, Susanne Hoffmann-Eifert, 2016, 2016 IEEE 8th International Memory Workshop (IMW).

dc Electrical Degradation of Perovskite‐Type Titanates: III, A Model of the Mechanism

Rainer Waser, R. Waser, Tudor Baiatu, 1990 .

Realization of regular arrays of nanoscale resistive switching blocks in thin films of Nb-doped SrTiO3

Rainer Waser, Regina Dittmann, Paul Meuffels, 2008 .

Role of the Electrode Material on the RESET Limitation in Oxide ReRAM Devices

Dirk Wouters, Rainer Waser, Stephan Menzel, 2018 .

Current status and challenges of ferroelectric memory devices

Rainer Waser, A. Petraru, Hermann Kohlstedt, 2005 .

Low temperature process and thin SBT films for ferroelectric memory devices

Rainer Waser, Walter Hartner, Thomas Mikolajick, 2000 .

Digest of Frontiers in Electronic Materials

Rainer Waser, Regina Dittmann, Juris Purans, 2012 .

Chemical solution deposition of ferroelectric yttrium-doped hafnium oxide films on platinum electrodes

Rainer Waser, Ulrich Böttger, T. Schneller, 2014 .

On the role of the metal oxide/reactive electrode interface during the forming procedure of valence change ReRAM devices.

Joachim Mayer, Rainer Waser, Alexander Meledin, 2019, Nanoscale.

Imaging three-dimensional polarization in epitaxial polydomain ferroelectric thin films

Rainer Waser, Ramamoorthy Ramesh, Ellen D. Williams, 2002 .

Structural investigations of Pt∕TiOx electrode stacks for ferroelectric thin film devices

Joachim Mayer, Rainer Waser, Ulrich Böttger, 2006 .

Ultra thin oxide films for dielectric and resistive memory applications

Rainer Waser, Sebastian Schmelzer, R. Waser, 2013 .

Dielectric, infrared, and Raman response of undoped SrTiO 3 ceramics: Evidence of polar grain boundaries

Martin Dressel, Přemysl Vaněk, Rainer Waser, 2001 .

Resistive donor-doped SrTiO3 sensors: I, basic model for a fast sensor response

Rainer Waser, R. Waser, R. Meyer, 2004 .

Scaling the Ferroelectric Field Effect Transistor

Rainer Waser, R. Waser, M. Fitsilis, 2005 .

Direct Observation of Charge Transfer in Solid Electrolyte for Electrochemical Metallization Memory

Rainer Waser, Stefan Tappertzhofen, Ilia Valov, 2012, Advanced materials.

A Simulation Model of Resistive Switching in Electrochemical Metallization Memory Cells (ECM)

Rainer Waser, Stephan Menzel, Carsten Kügeler, 2009 .

TiO2—a prototypical memristive material

Rainer Waser, Wolfgang Speier, Astrid Besmehn, 2011, Nanotechnology.

Introduction to Nanoionic Elements for Information Technology

Daniele Ielmini, Rainer Waser, Hisashi Shima, 2016 .

Understanding filamentary growth in electrochemical metallization memory cells using kinetic Monte Carlo simulations.

Rainer Waser, Stephan Menzel, Philip Kaupmann, 2015, Nanoscale.

Lifetime estimation due to imprint failure in ferroelectric SrBi2Ta2O9 thin films

Rainer Waser, Walter Hartner, M. Grossmann, 2000 .

Resistive switching in metal–ferroelectric–metal junctions

Rainer Waser, Hermann Kohlstedt, Ulrich Poppe, 2003 .

Processes and Effects of Oxygen and Moisture in Resistively Switching TaOx and HfOx

Rainer Waser, Ilia Valov, R. Waser, 2018 .

Physical origins and suppression of Ag dissolution in GeS(x)-based ECM cells.

Rainer Waser, Ilia Valov, Jan van den Hurk, 2014, Physical chemistry chemical physics : PCCP.

Different threshold and bipolar resistive switching mechanisms in reactively sputtered amorphous undoped and Cr-doped vanadium oxide thin films

Dirk Wouters, Rainer Waser, Regina Dittmann, 2018 .

Chemically-inactive interfaces in thin film Ag/AgI systems for resistive switching memories

Rainer Waser, Stefan Tappertzhofen, Ilia Valov, 2013, Scientific Reports.

On the SET/RESET current asymmetry in electrochemical metallization memory cells

Rainer Waser, Stephan Menzel, S. Menzel, 2014 .

Cluster-like resistive switching of SrTiO3:Nb surface layers

Gustav Bihlmayer, Rainer Waser, Wolfgang Speier, 2013 .

The interface screening model as origin of imprint in PbZrxTi1−xO3 thin films. I. Dopant, illumination, and bias dependence

Rainer Waser, M. Grossmann, O. Lohse, 2002 .

A Theoretical and Experimental View on the Temperature Dependence of the Electronic Conduction through a Schottky Barrier in a Resistively Switching SrTiO3‐Based Memory Cell

Rainer Waser, Stephan Menzel, Regina Dittmann, 2018, Advanced Electronic Materials.

Redox processes in silicon dioxide thin films using copper microelectrodes

Rainer Waser, Stephan Menzel, Stefan Tappertzhofen, 2011 .

Resistive Switching of Individual, Chemically Synthesized TiO2 Nanoparticles.

Rainer Waser, Susanne Hoffmann-Eifert, Camilla La Torre, 2015, Small.

Curie-Weiss law of (Ba1-xSrx)TiO3 thin films prepared by chemical solution deposition

Rainer Waser, R. Waser, S. Hoffmann, 1998 .

A NOVEL DESIGN FOR INTEGRATED RF-MEM SWITCHES USING FERROELECTRIC THIN FILMS

Rainer Waser, Carsten Kügeler, Ulrich Böttger, 2005 .

Bipolar resistive switching in oxides: mechanisms and scaling

Rainer Waser, Regina Dittmann, Rainer Bruchhaus, 2011 .

Polar oxides : properties, characterization, and imaging

Rainer Waser, S. Tiedke, Ulrich Böttger, 2004 .

Circuit design issues affecting present and future deep sub-micron ferroelectric random-access memories

Rainer Waser, Scott R. Summerfelt, Jürgen T. Rickes, 2001 .

Subfilamentary Networks Cause Cycle-to-Cycle Variability in Memristive Devices.

Rainer Waser, Stephan Menzel, Regina Dittmann, 2017, ACS nano.

Separation of bulk and interface contributions to electroforming and resistive switching behavior of epitaxial Fe-doped SrTiO3

Rainer Waser, Regina Dittmann, Paul Meuffels, 2009 .

Reliability analysis of the low resistance state stability of Ge0.3Se0.7 based solid electrolyte nonvolatile memory cells

Rainer Waser, Hermann Kohlstedt, Carsten Kügeler, 2009 .

Valence change detection in memristive oxide based heterostructure cells by hard X-ray photoelectron emission spectroscopy

Dirk Wouters, Rainer Waser, Regina Dittmann, 2018 .

An integrated microelectromechanical microwave switch based on piezoelectric actuation

Rainer Waser, Carsten Kügeler, Ulrich Böttger, 2009 .

Dynamics of the metal-insulator transition of donor-doped SrTi O 3

Rainer Waser, Alexander F. Zurhelle, Roger A. De Souza, 2016 .

Humidity effects on the redox reactions and ionic transport in a Cu/Ta2O5/Pt atomic switch structure

Masakazu Aono, Rainer Waser, Ilia Valov, 2016 .

Chemical Solution Deposition of Ferroelectric Thin Films

Rainer Waser, Robert W. Schwartz, R. W. Schwartz, 2005 .

Origin of soft-mode stiffening and reduced dielectric response in SrTiO3 thin films

Martin Dressel, Rainer Waser, Susanne Hoffmann-Eifert, 2002 .

Preisach model for the simulation of ferroelectric capacitors

Dirk Wouters, Rainer Waser, Herman Maes, 2001 .

Improved endurance behavior of resistive switching in (Ba,Sr)TiO3 thin films with W top electrode

Rainer Waser, Regina Dittmann, R. Dittmann, 2008 .

Impedance spectroscopy of TiO2 thin films showing resistive switching

Rainer Waser, Doo Seok Jeong, Herbert Schroeder, 2006 .

Nanoscale resistive switching in SrTiO3 thin films

Rainer Waser, Regina Dittmann, Wolfgang Speier, 2007 .

Resistive switching and data reliability of epitaxial (Ba,Sr)TiO3 thin films

Rainer Waser, Regina Dittmann, Silvia Karthäuser, 2006 .

Degradation of dielectric ceramics

Rainer Waser, R. Waser, Tudor Baiatu, 1989 .

Nanosized Conducting Filaments Formed by Atomic-Scale Defects in Redox-Based Resistive Switching Memories

Joachim Mayer, Rainer Waser, Regina Dittmann, 2017 .

Formation and Movement of Cationic Defects During Forming and Resistive Switching in SrTiO3 Thin Film Devices

Rainer Waser, Regina Dittmann, Hongchu Du, 2015 .

Bipolar Resistive Switching in Oxides for Memory Applications

Rainer Waser, Rainer Bruchhaus, R. Waser, 2010 .

Faradaic currents during electroforming of resistively switching Ag-Ge-Se type electrochemical metallization memory cells.

Rainer Waser, Ilia Valov, Christina Schindler, 2009, Physical chemistry chemical physics : PCCP.

Formation of micro-crystals on the (100) surface of SrTiO3 at elevated temperatures

Rainer Waser, Wolfgang Speier, R. Waser, 2000 .

Preparation and characterization of GeSx thin-films for resistive switching memories☆

Rainer Waser, Ilia Valov, Jan van den Hurk, 2013 .

SrTiO3 thin film capacitors on silicon substrates with insignificant interfacial passive layers

L. Oberbeck, Rainer Waser, Sebastian Schmelzer, 2010 .

Coercive field of ultrathin Pb(Zr0.52Ti0.48)O3 epitaxial films

Rainer Waser, Hermann Kohlstedt, J. R. Contreras, 2003 .

On the origin of bistable resistive switching in metal organic charge transfer complex memory cells

Rainer Waser, Ulrich Böttger, C. Schindler, 2007 .