Seiichi Hayakawa

nHPD² (next High Power Density Dual) with next generation chip suitable for low internal inductance package

Katsunori Azuma, Katsuaki Saito, Daisuke Kawase, 2016 .

Suppression of self-excited oscillation for common package of Si-IGBT and SiC-MOS

Toru Masuda, Katsuaki Saito, Yasushi Sasajima, 2017, 2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD).

Suppression of reverse recovery ringing 3.3kV/450A Si/SiC hybrid in low internal inductance package: Next high power density dual; nHPD2

Masamitsu Inaba, Katsunori Azuma, Katsuaki Saito, 2016, 2016 IEEE Applied Power Electronics Conference and Exposition (APEC).

Improvement of power cycling reliability of 3.3kV full-SiC power modules with sintered copper technology for Tj, max=175°C

Daisuke Kawase, Masakazu Sagawa, Takashi Ishigaki, 2018, 2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD).