M. A. Putyato

Experimental determination of the incorporation factor of As4 during molecular beam epitaxy of GaAs

O. Pchelyakov, V. Preobrazhenskii, M. Putyato, 1999 .

Structural Properties and Energy Spectrum of Novel GaSb/AlP Self-Assembled Quantum Dots

D. S. Abramkin, M. Petrushkov, M. Putyato, 2023, Nanomaterials.

Influence of Intermediate Low-Temperature Heating on Precipitation in Nonstoichiometric GaAs

V. Chaldyshev, V. Preobrazhenskii, B. Semyagin, 2024, Semiconductors.

Diffusion Blurring of GaAs Quantum Wells Grown at Low Temperature

V. Chaldyshev, V. Preobrazhenskii, M. Putyato, 2018, Semiconductors.

Two- and three-dimensional arrays of nanoscale as clusters in low-temperature grown GaAs

M. A. Putyato, A. Claverie, P. Werner, 2002, 12th International Conference on Semiconducting and Insulating Materials, 2002. SIMC-XII-2002..

Enhanced As-Sb intermixing of GaSb monolayer superlattices in low- temperature grown GaAs

B. R. Semyagin, V. V. Preobrazhenskii, V. V. Chaldyshev, 2001 .

Enhanced intermixing in anion and cation sublattices of low-temperature grown GaAs

M. A. Putyato, Yu. G. Musikhin, A. Suvorova, 2000, 2000 International Semiconducting and Insulating Materials Conference. SIMC-XI (Cat. No.00CH37046).

Kinetics of (2 × 4) → (3 × 1(6)) structural changes on GaAs(001) surfaces during the UHV annealing

M. Putyato, A. Vasev, V. Preobrazhenskii, 2018, Surface Science.