Yoshiki Yano

发表

Characteristics of AlN layer on four-inch sapphire substrate by high-temperature annealing in nitrogen atmosphere

Yuji Tomita, Akira Mishima, Yoshiki Yano, 2018, OPTO.

High growth rate of AlGaN for buffer structures for GaN on Si to increase throughput

Akira Yamaguchi, Jun Yamamoto, Kosuke Uchiyama, 2012, OPTO.

The mobile station positioning system

永井拓也, Yoshiki Yano, Takuya Nagai, 2008 .

Criteria for versatile GaN MOVPE tool: high growth rate GaN by atmospheric pressure growth

Akira Yamaguchi, Jun Yamamoto, Yasuhiro Harada, 2011 .

Recess gate AlGaN/GaN HEMTs using overlap gate metal structure

Yoshiki Yano, M. Shimizu, T. Ide, 2010 .

High Breakdown Voltage AlGaN/GaN MIS-HEMT with SiN and TiO2 Gate Insulator

Hiromichi Ohashi, Hajime Okumura, Yoshiki Yano, 2006 .

Accelerated GaAs growth through MOVPE for low-cost PV applications

Yoshiaki Nakano, Kentaroh Watanabe, Hassanet Sodabanlu, 2018 .

Lattice-matched InAlN/GaN two-dimensional electron gas with high mobility and sheet carrier density by plasma-assisted molecular beam epitaxy

Hajime Okumura, Yoshiki Yano, Nakao Akutsu, 2007 .