M. Toita

Random Telegraph Signal Statistical Analysis using a Very Large-scale Array TEG with 1M MOSFETs

S. Sugawa, S. Watabe, K. Abe, 2007, 2007 IEEE Symposium on VLSI Technology.

Novel ultra-low power RF lateral BJT on SOI-CMOS compatible substrate for SoC applications

K. Takasuka, A. Ishikawa, H. Imai, 2005, 2005 IEEE International SOI Conference Proceedings.

A RF lateral BJT on SOI for realization of RF SOI-BiCMOS technology

Wai Tung Ng, K. Takasuka, A. Ishikawa, 2006, Digest of Papers. 2006 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems.

Microwave power transmission for wireless tag

Y. Nikawa, M. Toita, T. Yanagimoto, 1999, 1999 Asia Pacific Microwave Conference. APMC'99. Microwaves Enter the 21st Century. Conference Proceedings (Cat. No.99TH8473).

Lateral high-speed bipolar transistors on SOI for RF SoC applications

S. Tamura, K. Takasuka, T. Kobayashi, 2005, IEEE Transactions on Electron Devices.

Novel ultra-low power RF Lateral BJT on SOI-CMOS compatible substrate

Wai Tung Ng, K. Takasuka, A. Ishikawa, 2005, 2005 IEEE Conference on Electron Devices and Solid-State Circuits.

Statistical Analysis of RTS Noise and Low Frequency Noise in 1M MOSFETs Using an Advanced TEG

Tadahiro Ohmi, Naoto Miyamoto, Shigetoshi Sugawa, 2007 .

A novel SOI lateral bipolar transistor with 30GHz f/sub max/ and 27V BV/sub CEO/ for RF power amplifier applications

A. Ishikawa, H. Imai, K. Takasuka, 2005, Proceedings. ISPSD '05. The 17th International Symposium on Power Semiconductor Devices and ICs, 2005..

Delay time constant analysis for f/sub /spl tau// optimization in RF Si/SiGe bipolar devices

A. Ishikawa, H. Imai, K. Takasuka, 2003, 2003 IEEE Conference on Electron Devices and Solid-State Circuits (IEEE Cat. No.03TH8668).

Low-leakage germanium-seeded laterally-crystallized single-grain 100-nm TFTs for vertical integration applications

V. Subramanian, M. Toita, K.C. Saraswat, 1999, IEEE Electron Device Letters.