J. F. Gibbons

Fabrication and analysis of deep submicron strained-Si n-MOSFET's

K. Rim, J. Hoyt, J. Gibbons, 2000 .

Si/Si/sub 1-x/Ge/sub x/ heterojunction bipolar transistors produced by limited reaction processing

J. Hoyt, J. Gibbons, C. King, 1989, IEEE Electron Device Letters.

Electron mobility enhancement in strained-Si n-type metal-oxide-semiconductor field-effect transistors

J. Welser, J. Welser, J. Hoyt, 1994, IEEE Electron Device Letters.