T. Kimura

Macro-defect-free homoepitaxial GaN growth through halogen-free vapor-phase epitaxy on native GaN seeds

D. Nakamura, K. Horibuchi, K. Kataoka, 2018 .

Tungsten carbide layers deposited on graphite substrates via a wet powder process as anti-parasitic-reaction coatings for reactor components in GaN growth

H. Amano, S. Nitta, D. Nakamura, 2020 .

Self-assembled single-crystal bimodal porous GaN exhibiting a petal effect: application as a sensing platform and substrate for optical devices

N. Mizoshita, Taishi Kimura, Yuri Yamada, 2022, Nanoscale advances.