Dai Okamoto

发表

Experimental demonstration of −730V vertical SiC p-MOSFET with high short circuit withstand capability for complementary inverter applications

Hiroshi Yano, Noriyuki Iwamuro, Junjie An, 2016, 2016 IEEE International Electron Devices Meeting (IEDM).

Unclamped Inductive Switching試験による4H-SiC MOSFETの最大接合温度の評価;Unclamped Inductive Switching試験による4H-SiC MOSFETの最大接合温度の評価;Investigation of Maximum Junction Temperature for 4H-SiC MOSFET during Unclamped Inductive Switching Test

Hiroshi Tadano, Hiroshi Yano, Noriyuki Iwamuro, 2017 .

All plastic ultra-small size imaging lens unit fabrication and evaluation for endoscope

Shinsuke Kawai, Seiichiro Kitagawa, Dai Okamoto, 2017, OPTO.

Accurate evaluation of fast threshold voltage shift for SiC MOS devices under various gate bias stress conditions

Hiroshi Yano, Shinsuke Harada, Hajime Okumura, 2017 .

Investigation of Near-Interface Traps Generated by NO Direct Oxidation in C-face 4H-SiC Metal–Oxide–Semiconductor Structures

Yukiharu Uraoka, Hiroshi Yano, Dai Okamoto, 2009 .

Threshold Voltage Instability in 4H-SiC MOSFETs with Nitrided Gate Oxide Revealed by Non-relaxation Method

Kenji Fukuda, Shinsuke Harada, Hajime Okumura, 2015 .

13-kV, 20-A 4H-SiC PiN Diodes for Power System Applications

Kenji Fukuda, Toshihiko Hayashi, Makoto Mizukami, 2014 .

Instability of 4H-SiC MOSFET Characteristics due to Interface Traps with Long Time Constants

Hiroshi Yano, Dai Okamoto, Tomoaki Hatayama, 2011 .

Threshold-voltage instability in 4H-SiC MOSFETs with nitrided gate oxide revealed by non-relaxation method

Kenji Fukuda, Shinsuke Harada, Hajime Okumura, 2015 .

Ultrahigh voltage SiC bipolar devices

Kenji Fukuda, Toshihiko Hayashi, Tsunenobu Kimoto, 2013, The 1st IEEE Workshop on Wide Bandgap Power Devices and Applications.

Improved Inversion Channel Mobility in 4H-SiC MOSFETs on Si Face Utilizing Phosphorus-Doped Gate Oxide

Hiroshi Yano, Dai Okamoto, Tomoaki Hatayama, 2010, IEEE Electron Device Letters.

Development of Ultrahigh-Voltage SiC Devices

Kenji Fukuda, Toshihiko Hayashi, Tsunenobu Kimoto, 2015, IEEE Transactions on Electron Devices.

Improved Channel Mobility in 4H-SiC MOSFETs by Boron Passivation

Hiroshi Yano, Ryoji Kosugi, Shinsuke Harada, 2014, IEEE Electron Device Letters.