Andrew R. J. Marshall

发表

Modelling and measurement of bandgap behaviour in medium-wavelength IR InAs/InAs0.815Sb0.185 strained-layer superlattices

Veronica Letka, James Keen, Adam Craig, 2017, Security + Defence.

Development of an ultrahigh-performance infrared detector platform for advanced spectroscopic sensing systems

Andrew R. J. Marshall, Khalid Hossain, Manish Jain, 2014, Defense + Security Symposium.

The development of extremely low-noise InAs electron APDs for SWIR active or passive imaging

Andrew R. J. Marshall, Chee Hing Tan, John P. R. David, 2009, Defense + Commercial Sensing.

InSb-based quantum dot nanostructures for mid-infrared photonic devices

Andrew R. J. Marshall, Anthony Krier, Peter James Carrington, 2016, NanoScience + Engineering.

Heteroepitaxial integration of InAs/InAsSb type-II superlattice barrier photodetectors onto silicon

Veronica Letka, Andrew R. J. Marshall, Anthony Krier, 2020, Optical Engineering + Applications.

Extension of resonant cavity-enhanced photodetection into the MWIR and LWIR ranges using a Ga-free type-II strained-layer superlattice

Veronica Letka, Adam Craig, Andrew R. J. Marshall, 2020, Defense + Commercial Sensing.

Low noise InAs avalanche photodiodes for high sensitivity FPAs

Andrew R. J. Marshall, Chee Hing Tan, John P. R. David, 2008, Security + Defence.

The development of extremely low noise InAs electron APDs for photon counting applications in SWIR/MWIR wavelengths

Andrew R. J. Marshall, Chee Hing Tan, John P. R. David, 2009, Optics + Optoelectronics.

Short-wave infrared GaInAsSb photodiodes grown on GaAs substrates

Andrew R. J. Marshall, Baolai Liang, John P. R. David, 2012, Other Conferences.

Fabrication of InAs photodiodes with reduced surface leakage current

Andrew R. J. Marshall, Chee Hing Tan, John P. R. David, 2007, SPIE Security + Defence.

Mid-infrared InAs0.79Sb0.21-based nBn photodetectors with Al0.9Ga0.2As0.1Sb0.9 barrier layers, and comparisons with InAs0.87Sb0.13 p-i-n diodes, both grown on GaAs using interfacial misfit arrays

Sanjay Krishna, Adam Craig, Andrew R. J. Marshall, 2013 .

III-V semiconductor extended short-wave infrared detectors

Tetsuya D. Mishima, Adam Craig, Andrew R. J. Marshall, 2017 .

Short-wave infrared barriode detectors using InGaAsSb absorption material lattice matched to GaSb

Andrew R. J. Marshall, Khalid Hossain, Gary W. Wicks, 2015 .

Electron dominated impact ionization and avalanche gain characteristics in InAs photodiodes

John P. R. David, Andrew R. J. Marshall, Chee Hing Tan, 2008 .

Low Leakage-Current InAsSb Nanowire Photodetectors on Silicon.

Lars-Erik Wernersson, Andrew R. J. Marshall, Anthony Krier, 2016, Nano letters.

InAs thermophotovoltaic cells with high quantum efficiency for waste heat recovery applications below 1000 °C

Andrey B. Krysa, Andrew R. J. Marshall, Xinxin Zhou, 2017, Solar Energy Materials and Solar Cells.

Mid-Infrared InAs/InAsSb Superlattice nBn Photodetector Monolithically Integrated onto Silicon

Veronica Letka, Andrew R. J. Marshall, Anthony Krier, 2019, ACS Photonics.