Seiji Mita

发表

Growth and characterization of GaN/AlGaN heterostructures on GaN substrate templates

Nikolaus Dietz, Zlatko Sitar, Vincent T. Woods, 2017, Optical Engineering + Applications.

Invited) Progress and Challenges of AlGaN Schottky Diodes Grown on AlN Substrates

Rafael Dalmau, Baxter Moody, Seiji Mita, 2017 .

Fermi level effect on strain of Si-doped GaN

James Tweedie, Zlatko Sitar, Seiji Mita, 2011, OPTO.

Fabrication and characterization of lateral polar GaN structures for second harmonic generation

Zlatko Sitar, Seiji Mita, Ronny Kirste, 2013, Photonics West - Optoelectronic Materials and Devices.

Al0.85Ga0.15N/Al0.6Ga0.4N High Electron Mobility Transistors on Native AlN Substrates with >9 MV/cm Mesa Breakdown Fields

Zlatko Sitar, Seiji Mita, Spyridon Pavlidis, 2021, 2021 Device Research Conference (DRC).

Influence of gallium supersaturation on the properties of GaN grown by metalorganic chemical vapor deposition

Rafael Dalmau, Zlatko Sitar, Seiji Mita, 2008 .

Correlation between mobility collapse and carbon impurities in Si-doped GaN grown by low pressure metalorganic chemical vapor deposition

Alexander Franke, Zlatko Sitar, Seiji Mita, 2016 .

Performance and Reliability of Deep-Ultraviolet Light-Emitting Diodes Fabricated on AlN Substrates Prepared by Hydride Vapor Phase Epitaxy

Toru Kinoshita, Baxter Moody, Yoshinao Kumagai, 2013 .

Linear dependency of Al-mole fraction with group-III precursor flows in AlxGa1−xN (0≤x≤1) deposition by LP OMVPE

James Tweedie, Zlatko Sitar, Seiji Mita, 2010 .

High internal quantum efficiency in AlGaN multiple quantum wells grown on bulk AlN substrates

Zlatko Sitar, Seiji Mita, Jinqiao Xie, 2015 .

Fabrication and structural properties of AlN submicron periodic lateral polar structures and waveguides for UV-C applications

Andreas Hoffmann, Alexander Franke, Marko Zgonik, 2016 .

Point defect reduction in wide bandgap semiconductors by defect quasi Fermi level control

James Tweedie, Zlatko Sitar, Seiji Mita, 2016 .

Growth and Characterization of AlN and AlGaN Epitaxial Films on AlN Single Crystal Substrates

James Tweedie, Rafael Dalmau, Martin Feneberg, 2010, ECS Transactions.

Strain dependence on polarization properties of AlGaN and AlGaN-based ultraviolet lasers grown on AlN substrates

James Tweedie, Zlatko Sitar, Seiji Mita, 2015 .

Stimulated emission and optical gain in AlGaN heterostructures grown on bulk AlN substrates

Wei Guo, Zlatko Sitar, Seiji Mita, 2014 .

Excitonic emission dynamics in homoepitaxial AlN films studied using polarized and spatio-time-resolved cathodoluminescence measurements

Zlatko Sitar, Kentaro Furusawa, Seiji Mita, 2013 .

Lasing and Longitudinal Cavity Modes in Photo-Pumped Deep Ultraviolet AlGaN Heterostructures

Wei Guo, Baxter Moody, Zlatko Sitar, 2013 .

Polarity Control of LP-MOVPE GaN using N 2 the Carrier Gas

Zlatko Sitar, Seiji Mita, Raoul Schlesser, 2005 .

The role of surface kinetics on composition and quality of AlGaN

James Tweedie, Zlatko Sitar, Jon-Paul Maria, 2016 .

6 kW/cm2 UVC laser threshold in optically pumped lasers achieved by controlling point defect formation

Alexander Franke, Zlatko Sitar, Seiji Mita, 2018, Applied Physics Express.

Refractive Index of III-metal-polar and N-polar AlGaN Waveguides Grown by Metal Organic Chemical Vapor Deposition

Marko Zgonik, Zlatko Sitar, Seiji Mita, 2013 .

Surface preparation and homoepitaxial deposition of AlN on (0001)-oriented AlN substrates by metalorganic chemical vapor deposition

James Tweedie, Rafael Dalmau, Zlatko Sitar, 2010 .