D. Frohman-Bentchkowsky
发表
D. Frohman-Bentchkowsky,
D. Frohman-Bentchkowsky,
1971
.
D. Frohman-Bentchkowsky,
Giora Yaron,
W. A. Lukaszek,
1979
.
D. Frohman-Bentchkowsky,
L. Vadasz,
D. Frohman-Bentchkowsky,
1969
.
D. Frohman-Bentchkowsky,
1981,
1981 International Electron Devices Meeting.
D. Frohman-Bentchkowsky,
B. Gilbert,
D. Frohman-Bentchkowsky,
1971
.
D. Frohman-Bentchkowsky,
L. Vadasz,
D. Frohman-Bentchkowsky,
1968
.
D. Frohman-Bentchkowsky,
L. Vadasz,
1968
.
D. Frohman-Bentchkowsky,
1971
.
Y. Nissan-Cohen,
J. Shappir,
D. Frohman-Bentchkowsky,
1983,
1983 International Electron Devices Meeting.
D. Frohman-Bentchkowsky,
D. Frohman-Bentchkowsky,
R.D. Katznelson,
1980,
IEEE Transactions on Electron Devices.
D. Frohman-Bentchkowsky,
D. Frohman-Bentchkowsky,
1970
.
J. Shappir,
B. Eitan,
D. Frohman-Bentchkowsky,
1981,
1981 International Electron Devices Meeting.
Y. Nissan-Cohen,
J. Shappir,
D. Frohman-Bentchkowsky,
1986
.
D. Frohman-Bentchkowsky,
1969
.
B. Eitan,
D. Frohman-Bentchkowsky,
B. Eitan,
1982,
IEEE Transactions on Electron Devices.
A. S. Grove,
D. Frohman-Bentchkowsky,
D. Frohman-Bentchkowsky,
1968
.
D. Frohman-Bentchkowsky,
D. Frohman-Bentchkowsky,
1968
.
Measurement of Fowler-Nordheim tunneling currents in MOS structures under charge trapping conditions
Y. Nissan-Cohen,
J. Shappir,
D. Frohman-Bentchkowsky,
1985
.