P. Roggwiller

Multi-dimensional simulation of MCT structures

Wolfgang Fichtner, Friedhelm Dr. Bauer, S. Muller, 1990, Proceedings of the 2nd International Symposium on Power Semiconductor Devices and Ics. ISPSD '90..

Soft recovery characteristics of punch-through power diodes by proton irradiation

Zhiming Chen, J. Waldmeyer, P. Roggwiller, 2000, Proceedings IPEMC 2000. Third International Power Electronics and Motion Control Conference (IEEE Cat. No.00EX435).

Design aspects of MOS-controlled thyristor elements: technology, simulation, and experimental results

Wolfgang Fichtner, Friedhelm Dr. Bauer, Thomas Stockmeier, 1991 .

A highly interdigitated GTO power switch with recessed gate structure

J. Gobrecht, B. Broich, P. Roggwiller, 1984, 1984 International Electron Devices Meeting.

Novel planar junction termination technique for high voltage power devices

T. Stockmeier, P. Roggwiller, 1990, Proceedings of the 2nd International Symposium on Power Semiconductor Devices and Ics. ISPSD '90..

Properties of a high-power field-controlled thyristor

J. Gobrecht, B. Broich, P. Roggwiller, 1986, 1986 International Electron Devices Meeting.