Kazukiyo Joshin

发表

60 and 77GHz Power Amplifiers in Standard 90nm CMOS

Tatsuya Hirose, Masaru Sato, Yoichi Kawano, 2008, 2008 IEEE International Solid-State Circuits Conference - Digest of Technical Papers.

Robust Q-Band InP- and GaN-HEMT Low Noise Amplifiers

Yasuhiro Nakasha, Masaru Sato, Yoichi Kawano, 2017, IEICE Trans. Electron..

A 77GHz transceiver in 90nm CMOS

Tatsuya Hirose, Masaru Sato, Yoichi Kawano, 2009, 2009 IEEE International Solid-State Circuits Conference - Digest of Technical Papers.

E-Band 85-mW Oscillator and 1.3-W Amplifier ICs Using 0.12µm GaN HEMTs for Millimeter-Wave Transceivers

Satoshi Masuda, Yasuhiro Nakasha, Naoki Hara, 2010, 2010 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS).

A millimeter-wave CMOS low noise amplifier using transformer neutralization techniques

Masaru Sato, Toshihide Suzuki, Yoichi Kawano, 2011, Asia-Pacific Microwave Conference 2011.

High Power GaN-HEMT for Wireless Base Station Applications

Toshihide Kikkawa, Kazukiyo Joshin, 2006, IEICE Trans. Electron..

Harmonic Feedback Circuit Effects on Intermodulation Products and Adjacent Channel Leakage Power in HBT Power Amplifier for 1. 95 GHz Wide-Band CDMA Cellular Phones

Yasuhiro Nakasha, Taisuke Iwai, Kazukiyo Joshin, 1999 .

A 150W E-mode GaAs Power FET with 35% PAE for IMT-2000 Base Station

Yasuhiro Nakasha, Takeshi Igarashi, J. Fukaya, 2000 .

Special Section on Microwave and Millimeter-wave Technologies

Kazukiyo Joshin, 2008, IEICE Trans. Electron..

Millimeter-Wave GaN HEMT for Power Amplifier Applications

Satoshi Masuda, Keiji Watanabe, Masaru Sato, 2014, IEICE Trans. Electron..

High-Speed Optical and Millimeter-Wave Wireless Link for Disaster Recovery

Kazuya Ota, Tetsuya Kawanishi, Ken-ichi Kitayama, 2015, 2015 IEEE Globecom Workshops (GC Wkshps).

High-power and high-efficiency AlGaN/GaN HEMT operated at 50 V drain bias voltage

S. Yokokawa, Naoki Hara, Toshihide Kikkawa, 2003, IEEE Radio Frequency Integrated Circuits (RFIC) Symposium, 2003.

A fully-integrated K-band CMOS power amplifier with Psat of 23.8 dBm and PAE of 25.1 %

Tatsuya Hirose, Masaru Sato, Yoichi Kawano, 2011, 2011 IEEE Radio Frequency Integrated Circuits Symposium.

GaN MMIC amplifiers for W-band transceivers

Naoki Hara, Toshihide Kikkawa, Kenji Imanishi, 2009, 2009 European Microwave Integrated Circuits Conference (EuMIC).

High performance and high reliability AlGaN/GaN HEMTs

Naoki Hara, Toshihide Kikkawa, Kenji Imanishi, 2009 .

SiC Backside Via-hole Process For GaN HEMT MMICs Using High Etch Rate ICP Etching

Y. Inoue, Naoki Hara, Toshihide Kikkawa, 2009 .

Thermal management for flip-chip high power amplifiers utilizing carbon nanotube bumps

Ikuo Soga, Taisuke Iwai, Toshihide Kikkawa, 2009, 2009 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT).

AlGaN/GaN Power HEMTs Using Surface-Charge-Controlled Structure with Recessed Ohmic Technique

Naoki Hara, Toshihide Kikkawa, Masahito Kanamura, 2003 .

Current Status and Future Prospects of GaN HEMTs for High Power and High Frequency Applications

Toshihide Kikkawa, Kenji Imanishi, Masahito Kanamura, 2013 .

3.6 W/mm high power density W-band InAlGaN/GaN HEMT MMIC power amplifier

Masaru Sato, Naoya Okamoto, Kazukiyo Joshin, 2016, 2016 IEEE Topical Conference on Power Amplifiers for Wireless and Radio Applications (PAWR).

K-band CMOS-based power amplifier module with MEMS tunable bandpass filter

Tatsuya Hirose, Osamu Toyoda, Yoichi Kawano, 2010, The 5th European Microwave Integrated Circuits Conference.

Miniaturized microwave tunable bandpass filters on high-k LTCC

Tatsuya Hirose, Osamu Toyoda, Yoichi Kawano, 2010, 2010 Asia-Pacific Microwave Conference.

Outlook for GaN HEMT Technology

Kazukiyo Joshin, K. Joshin, S. Masuda, 2014 .

InGaP/GaAs power HBTs with a low bias voltage

Hiroshi Yamada, Taisuke Iwai, Kenji Imanishi, 1995, Proceedings of International Electron Devices Meeting.

Reliability of GaN HEMTs: current status and future technology

Naoki Hara, Toshihide Kikkawa, Kenji Imanishi, 2009, 2009 IEEE International Reliability Physics Symposium.

High‐power GaN‐HEMT with high three‐terminal breakdown voltage for W‐band applications

Naoki Hara, Toshihide Kikkawa, Kenji Imanishi, 2009 .

A 24 GHz 90-nm CMOS-based power amplifier module with output power of 20 dBm

Masayuki Fujita, Tatsuya Hirose, Masaru Sato, 2009, 2009 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT).