Enhai Zhao

Investigating the differences in low-frequency noise behavior of npn and pnp SiGe HBTs fabricated in a complementary SiGe HBT BiCMOS on SOI technology

John D. Cressler, Zhenrong Jin, Hiroshi Yasuda, 2005, SPIE International Symposium on Fluctuations and Noise.

1/f noise and RTS in advanced bipolar technologies

Keith Green, Zeynep Celik-Butler, Enhai Zhao, 2003, SPIE International Symposium on Fluctuations and Noise.

On the mechanisms of low-frequency noise in vertical silicon pnp BJTs

John D. Cressler, Peng Cheng, Enhai Zhao, 2007, SPIE International Symposium on Fluctuations and Noise.

A New Device Phenomenon in Cryogenically-Operated SiGe HBTs

Qingqing Liang, R. Krithivasan, Jiahui Yuan, 2006, 2006 International Electron Devices Meeting.

Assessing reliability issues in cryogenically-operated SiGe HBTs

C. Grens, Enhai Zhao, Chendong Zhu, 2005, Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting, 2005..

Temperature dependence of 1/f noise in polysilicon-emitter bipolar transistors

Zeynep Celik-Butler, Ranadeep Dutta, Enhai Zhao, 2002 .

An Investigation of Dose Rate and Source Dependent Effects in 200 GHz SiGe HBTs

Bongim Jun, M. Bellini, M.A. Carts, 2006, IEEE Transactions on Nuclear Science.