S. Mogg

1.3-μm InGaAs(N)/GaAs vertical-cavity lasers

Mattias Hammar, Carl Asplund, Thomas Aggerstam, 2003, SPIE OPTO.

Optimization of the barrier height in 1.3-μm InGaAsP multiple-quantum-well active regions for high-temperature operation

Joachim Piprek, S. Mogg, J. Piprek, 2001, SPIE OPTO.

1300-nm GaAs-based vertical-cavity lasers

Mattias Hammar, Carl Asplund, Thomas Aggerstam, 2003, Photonics Fabrication Europe.

Doping-induced losses in AlAs/GaAs distributed Bragg reflectors

Mattias Hammar, Carl Asplund, N. Chitica, 2001 .

Temperature-dependent performance of 1.55 /spl mu/m vertical-cavity lasers with InGaAsP/InP bottom mirror

Mattias Hammar, I. Sagnes, Klaus Streubel, 1999, Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362).

Properties of highly strained InGaAs/GaAs quantum wells for 1.2-μm laser diodes

Richard Schatz, Mattias Hammar, S. Mogg, 2002 .

Electrically injected 1.55 /spl mu/m InP-based photonic crystal microcavity coherent light source

Weidong Zhou, Peichen Yu, S. Mogg, 2002, Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307).

OPTICS; ATOMS and MOLECULES; SPECTROSCOPY 1687 Calibration of optical tweezers with differential interference contrast signals

Francesco S. Pavone, David J. Webb, Ian Bennion, 2002 .

Low-threshold, high-temperature operation of 1.2 mu m InGaAs vertical cavity lasers

Mattias Hammar, Carl Asplund, S. Mogg, 2001 .

MOVPE-grown GaInNAsVCSELs at 1.3 mu m with conventional mirror design approach

Mattias Hammar, Anders Larsson, Peter Modh, 2003 .

1260 nm InGaAs vertical-cavity lasers

Mattias Hammar, Carl Asplund, S. Mogg, 2002 .