Tangsheng Chen

Characterization of Current Collapse and Enhancement of Hydrogen-Terminated Diamond MOSFET Due to Long-Term Trapping Effects

Yuehang Xu, Y. Kong, Zhihao D. Chen, 2024, IEEE Transactions on Electron Devices.

Interface Engineering for High‐Performance Top‐Gated MoS2 Field‐Effect Transistors

Lei Liao, Yun Wu, L. Liao, 2014, Advanced materials.