W. P. Noble

Session 18 Integrated circuits — Modeling and analysis of MOS circuits

W. P. Noble, E. Cohen, 1985 .

A fundamental performance limit of optimized 3.3-V sub-quarter-micrometer fully overlapped LDD MOSFET's

Edward J. Nowak, William R. Tonti, A. Bryant, 1992 .

Fundamental limitations on DRAM storage capacitors

W. P. Noble, W. Walker, W. Noble, 2008, IEEE Circuits and Devices Magazine.

Doping profile design for substrate hot carrier reliability in deep submicron field effect transistors

Steven W. Mittl, William R. Tonti, W. P. Noble, 1991, 29th Annual Proceedings Reliability Physics 1991.

The effects of gate field on the leakage characteristics of heavily doped junctions

S. H. Voldman, A. Bryant, W. P. Noble, 1989 .