吕杭炳

发表

Overcoming the Dilemma Between RESET Current and Data Retention of RRAM by Lateral Dissolution of Conducting filament

孙海涛, 刘琦, 吕杭炳, 2013 .

Set statistics in conductive bridge random access memory device

李阳, 刘明, 刘琦, 2014 .

a-Si/WO3 双层结构的自整流阻变存储器

刘琦, 吕杭炳, 李颖弢, 2013 .

Method and structure for improving reliability of non-volatile resistive memory

刘明, 王艳, 刘琦, 2011 .

Thermal crosstalk in 3-dimensional RRAM crossbar array

刘明, 刘琦, 吕杭炳, 2015 .

Bipolar one diode–one resistor integration for high-density resistive memory applications

刘琦, 吕杭炳, 李颖弢, 2013 .

Degradation of Gate Voltage Controlled Multilevel Storage in One Transistor One Resistor Electrochemical Metallization Cell

王明, 刘明, 刘琦, 2015 .

Improved Resistive Switching Uniformity in Cu/HfO2/Pt Devices by Using Current Sweeping Mode

刘明, 刘琦, 王艳, 2011 .

Atomic View of Filament Growth in Electrochemical Memristive Elements

刘明, 孙海涛, 刘琦, 2015 .

Polarity-Free Resistive Switching Characteristics of CuxO Films for Non-volatile Memory Applications

周鹏, 林殷茵, 吕杭炳, 2008 .

Investigation of LRS dependence on the retention of HRS in CBRAM

王明, 刘明, 刘琦, 2015 .

Improving resistance uniformity and endurance of resistive switching memory by accurately controlling the stress time of pulse program operation

王明, 刘明, 刘琦, 2015 .