S. Sergeant

发表

Enhancing interface doping in graphene-metal hybrid devices using H2 plasma clean

M. Heyns, Z. Tokei, K. Ueno, 2021 .

Engineering Wafer-Scale Epitaxial Two-Dimensional Materials through Sapphire Template Screening for Advanced High-Performance Nanoelectronics.

I. Radu, M. Caymax, C. Huyghebaert, 2021, ACS nano.

Use of the Indirect Photoluminescence Peak as an Optical Probe of Interface Defectivity in MoS2

C. Stampfer, Kenji Watanabe, T. Taniguchi, 2020, Advanced Materials Interfaces.

Width‐Dependent Sheet Resistance of Nanometer‐Wide Si Fins as Measured with Micro Four‐Point Probe

W. Vandervorst, D. H. Petersen, A. Moussa, 2018 .

Enhanced Thermal Conductivity of Free-Standing Double-Walled Carbon Nanotube Networks

E. Chávez‐Ángel, Klaas-Jan Tielrooij, J. Mehew, 2023, ACS Applied Materials and Interfaces.

Chemical Vapor Deposition of a Single-Crystalline MoS2 Monolayer through Anisotropic 2D Crystal Growth on Stepped Sapphire Surface.

A. Delabie, Sreetama Banerjee, B. Groven, 2024, ACS nano.

On the van der Waals Epitaxy of Homo-/Heterostructures of Transition Metal Dichalcogenides.

C. Merckling, M. Heyns, M. Houssa, 2020, ACS applied materials & interfaces.

Fundamental limitation of van der Waals homoepitaxy by stacking fault formation in WSe2

C. Merckling, M. Heyns, M. Houssa, 2020, 2D Materials.

Importance of the substrate’s surface evolution during the MOVPE growth of 2D-transition metal dichalcogenides

C. Huyghebaert, Q. Smets, I. Asselberghs, 2019, Nanotechnology.