Sarah L. Keller

发表

Internal efficiency analysis of 280-nm light emitting diodes

Steven P. DenBaars, Joachim Piprek, Craig G. Moe, 2004, SPIE Optics East.

The Monk''s Problem''s: A Performance Comparison of Different Learning Methods

Ivan Bratko, Peter W. Pachowicz, Sebastian Thrun, 1991 .

Radiative recombination lifetime measurements of InGaN single quantum well

John E. Bowers, S. P. DenBaars, Chi-Kuang Sun, 1996 .

GaN characterizations using femtosecond optical pulses

Umesh K. Mishra, S. P. DenBaars, M. P. Mack, 1999 .

Ultrafast optical characterization of carrier capture times in InxGa1−xN multiple quantum wells

Ümit Özgür, H. C. Casey, Henry O. Everitt, 2000 .

Improvement of GaN-based laser diode facets by FIB polishing

Larry A. Coldren, James S. Speck, Umesh K. Mishra, 1998 .

Emission mechanisms of bulk GaN and InGaN quantum wells prepared by lateral epitaxial overgrowth

John E. Bowers, James S. Speck, Umesh K. Mishra, 1999 .

N‐face high electron mobility transistors with a GaN‐spacer

James S. Speck, Umesh K. Mishra, Siddharth Rajan, 2007 .

HIGH MOBILITY TWO-DIMENSIONAL ELECTRON GAS IN ALGAN/GAN HETEROSTRUCTURES GROWN BY PLASMA-ASSISTED MOLECULAR BEAM EPITAXY

James S. Speck, Umesh K. Mishra, S. P. DenBaars, 1999 .

Effect of threading dislocations on AlGaN/GaN heterojunction bipolar transistors

Mark J. W. Rodwell, James S. Speck, Umesh K. Mishra, 2001 .

Unpassivated p-GaN/AlGaN/GaN HEMTs with 7.1 W/mm at 10 GHz

Umesh K. Mishra, Giacinta Parish, Alessandro Chini, 2003 .

Nucleation layer evolution in metal‐organic chemical vapor deposition grown GaN

James S. Speck, Umesh K. Mishra, S. P. DenBaars, 1996 .

Nonpolar InGaN∕GaN emitters on reduced-defect lateral epitaxially overgrown a-plane GaN with drive-current-independent electroluminescence emission peak

James S. Speck, Shuji Nakamura, Umesh K. Mishra, 2004 .

Femtosecond Z-scan measurement of GaN

Umesh K. Mishra, S. P. DenBaars, M. P. Mack, 1999 .

Effects of Si-doping in the barriers of InGaN multiquantum well purplish-blue laser diodes

Larry A. Coldren, John E. Bowers, David R. Clarke, 1998 .

Stimulated emission characteristics of InGaN/GaN multiple quantum wells: Excitation length and excitation density dependence

Umesh K. Mishra, S. P. DenBaars, Yong-Hoon Cho, 1998 .

Growth and characterization of bulk InGaN films and quantum wells

Larry A. Coldren, Umesh K. Mishra, Bernd Keller, 1996 .

Cathodoluminescence characterization of dislocations in gallium nitride using a transmission electron microscope

James S. Speck, Shuji Nakamura, Umesh K. Mishra, 2003 .

AlGaN/GaN dual-gate modulation-doped field-effect transistors

Mark J. W. Rodwell, Umesh K. Mishra, Giacinta Parish, 1999 .

High quantum efficiency InGaN/GaN multiple quantum well solar cells with spectral response extending out to 520 nm

James S. Speck, Shuji Nakamura, Robert M. Farrell, 2011 .

Spin coherence and dephasing in GaN

Umesh K. Mishra, Bernd Beschoten, Evelyn L. Hu, 2001 .

Persistent Photoconductivity in a High Mobility two Dimensional Electron Gas in an AlGaN/GaN Heterostructure

Christiane Poblenz, James S. Speck, William C. Mitchel, 2000 .

Two-dimensional electron-gas AlN/GaN heterostructures with extremely thin AlN barriers

James S. Speck, Umesh K. Mishra, Sarah L. Keller, 2000 .

Dopant activation and ultralow resistance ohmic contacts to Si-ion-implanted GaN using pressurized rapid thermal annealing

James S. Speck, Umesh K. Mishra, Patrick Waltereit, 2004 .

Gallium nitride based transistors

Daniel S. Green, Umesh K. Mishra, S. P. DenBaars, 2001 .

Surface Potential at as‐Grown GaN(0001) MBE Layers

Umesh K. Mishra, Sarah L. Keller, Angela Rizzi, 2002 .

Localized exciton dynamics in nonpolar (112¯0) InxGa1−xN multiple quantum wells grown on GaN templates prepared by lateral epitaxial overgrowth

James S. Speck, Shuji Nakamura, Umesh K. Mishra, 2005 .

Optimization of AlGaN/GaN HEMTs for high frequency operation

Umesh K. Mishra, S. P. DenBaars, Tomas Palacios, 2006 .

Piezoelectric surface barrier lowering applied to InGaN/GaN field emitter arrays

Umesh K. Mishra, S. P. DenBaars, Peter Kozodoy, 1998 .

Mechanisms of lateral epitaxial overgrowth of gallium nitride by metalorganic chemical vapor deposition

James S. Speck, Umesh K. Mishra, S. P. DenBaars, 1998 .

Cleaved GaN facets by wafer fusion of GaN to InP

John E. Bowers, James S. Speck, Xinru Wu, 1996 .

Growth of AlGaN/GaN heterojunction field effect transistors on semi-insulating GaN using an AlGaN interlayer

Shuji Nakamura, Umesh K. Mishra, S. P. DenBaars, 2009 .

Electrical characterization of GaN p-n junctions with and without threading dislocations

James S. Speck, Umesh K. Mishra, S. P. DenBaars, 1998 .

Properties of N-polar AlGaN/GaN heterostructures and field effect transistors grown by metalorganic chemical vapor deposition

James S. Speck, Umesh K. Mishra, S. P. DenBaars, 2008 .

Femtosecond studies of carrier dynamics in InGaN

John E. Bowers, S. P. DenBaars, Chi-Kuang Sun, 1997 .

Effect of the growth rate and the barrier doping on the morphology and the properties of InGaN/GaN quantum wells

Umesh K. Mishra, S. P. DenBaars, Evelyn L. Hu, 1998 .

-Pulsed- Operation of -Cleaved-Facet- InGaN Laser -Diodes-

Larry A. Coldren, John E. Bowers, S. P. DenBaars, 1997 .

CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES 3202 Controlled doping of phthalocyanine layers by cosublimation with acceptor molecules: A systematic Seebeck and conductivity study

Robert A Norwood, Stephen M. Emo, Karl Leo, 1998 .

MOCVD growth of AlGaN films for solar blind photodetectors

James S. Speck, Umesh K. Mishra, S. P. DenBaars, 2004 .

Growth of bulk InGaN films and quantum wells by atmospheric pressure metalorganic chemical vapour deposition

Umesh K. Mishra, S. P. DenBaars, Bernd Keller, 1997 .

GAIN SPECTROSCOPY ON INGAN/GAN QUANTUM WELL DIODES

Larry A. Coldren, Yoon-Kyu Song, Umesh K. Mishra, 1997 .

Si doping effect on strain reduction in compressively strained Al0.49Ga0.51N thin films

James S. Speck, Umesh K. Mishra, Patrick Waltereit, 2003 .

On trapping mechanisms at oxide-traps in Al2O3/GaN metal-oxide-semiconductor capacitors

Gaudenzio Meneghesso, Enrico Zanoni, Umesh K. Mishra, 2016 .

High quality AlN grown on SiC by metal organic chemical vapor deposition

Shuji Nakamura, Umesh K. Mishra, S. P. DenBaars, 2008 .

Near-field scanning optical spectroscopy of an InGaN quantum well

Paul A. Crowell, Evelyn L. Hu, Sarah L. Keller, 1998 .

$f_{T}$ and $f_{\rm MAX}$ of 47 and 81 GHz , Respectively, on N-Polar GaN/AlN MIS-HEMT

James S. Speck, Umesh K. Mishra, Nidhi, 2009 .

Gallium nitride based high power heterojunction field effect transistors: process development and present status at UCSB

Umesh K. Mishra, S. P. DenBaars, Bernd Keller, 2001 .

12 W/mm power density AlGaN/GaN HEMTs on sapphire substrate

Umesh K. Mishra, Alessandro Chini, Sarah L. Keller, 2004 .

Impurity incorporation in heteroepitaxial N-face and Ga-face GaN films grown by metalorganic chemical vapor deposition

Umesh K. Mishra, S. P. DenBaars, Sarah L. Keller, 2008 .

2.1 A/mm current density AlGaN/GaN HEMT

Gaudenzio Meneghesso, Enrico Zanoni, Umesh K. Mishra, 2003 .

Microstructure of GaN laterally overgrown by metalorganic chemical vapor deposition

James S. Speck, Xinru Wu, Umesh K. Mishra, 1998 .

GaN based microwave power HEMTs

Umesh K. Mishra, S. P. DenBaars, Y.-F. Wu, 1998 .

Integration of>tex /tex

Hongtao Xu, Robert A. York, Umesh K. Mishra, 2004 .

CATHODOLUMINESCENCE MAPPING OF EPITAXIAL LATERAL OVERGROWTH IN GALLIUM NITRIDE

James S. Speck, Umesh K. Mishra, S. P. DenBaars, 1999 .

Growth and characteristics of Fe-doped GaN

Umesh K. Mishra, S. P. DenBaars, Sarah L. Keller, 2003 .

A 3-10-GHz GaN-based flip-chip integrated broad-band power amplifier

Robert A. York, Umesh K. Mishra, Giacinta Parish, 2000 .