Thomas T Zeng

Low-voltage short-channel MoS2 memtransistors with high gate-tunability

M. Hersam, V. Sangwan, Stephanie E. Liu, 2024, Journal of Materials Research.

Direct Characterization of Buried Interfaces in 2D/3D Heterostructures Enabled by GeO2 Release Layer.

M. Hersam, J. A. Ohlhausen, V. Sangwan, 2024, ACS applied materials & interfaces.