John McMacken

An efficient and practical MOS statistical model for digital applications

Juin J. Liou, Q. Zhang, J. Ross Thomson, 2000, 2000 IEEE International Symposium on Circuits and Systems. Emerging Technologies for the 21st Century. Proceedings (IEEE Cat No.00CH36353).

Design of LNA at 2.4 GHz using 0.25 μm CMOS technology

Thomas X. Wu, John McMacken, Xiaomin Yang, 2003 .

HBT modeling for cellular handset applications

John McMacken, Sonja Nedeljkovic, Joseph Gering, 2009, 2009 IEEE 10th Annual Wireless and Microwave Technology Conference.

Global dynamic FET model for GaN transistors: DynaFET model validation and comparison to locally tuned models

Jianjun Xu, David E. Root, Faramarz Kharabi, 2014, 83rd ARFTG Microwave Measurement Conference.

Nonlinear Transistor Model Parameter Extraction Techniques: Extrinsic parameter and parasitic elements in III–V HBT and HEMT modeling

Faramarz Kharabi, John McMacken, Joseph M. Gering, 2011 .

A hybrid modeling approach for drain-source capacitance of source field plated GaN FET devices for multi-bias application

Neil Craig, Joe Gering, John McMacken, 2017, 2017 IEEE MTT-S International Microwave Symposium (IMS).

Worst-case analysis and statistical simulation of MOSFET devices based on parametric test data

Qiang Zhang, Juin J. Liou, J. Ross Thomson, 2001 .

Statistical modeling of MOS devices for parametric yield prediction

Qiang Zhang, Juin J. Liou, J. Ross Thomson, 2002, Microelectron. Reliab..

Statistical Modeling of MOS Devices for Parametric Yield Prediction

Juin J. Liou, J. Ross Thomson, John McMacken, 2002 .

High density interconnect chip interconnect structure

John McMacken, Paul Arthur Laymann, 2002 .