Y. G. Kim
发表
E-mode planar Lg = 35 nm In0.7Ga0.3As MOSFETs with InP/Al2O3/HfO2 (EOT = 0.8 nm) composite insulator
M. Urteaga,
D. Kim,
B. Brar,
2012,
2012 International Electron Devices Meeting.