Taisuke Ohta

Controlling electron and hole concentration in MoS2 through scalable plasma processes

Christopher M. Smyth, Taisuke Ohta, Stanley S. Chou, 2024, Journal of Vacuum Science & Technology A.

Direct Characterization of Buried Interfaces in 2D/3D Heterostructures Enabled by GeO2 Release Layer.

M. Hersam, J. A. Ohlhausen, V. Sangwan, 2024, ACS applied materials & interfaces.