Jinqiao Xie

发表

AlGaN/GaN MOS transistors using crystalline ZrO2 as gate dielectric

Hadis Morkoç, V. Avrutin, Natalia Izyumskaya, 2007, SPIE OPTO.

Ferroelectric PZT/AlGaN/GaN field effect transistors

Ya. I. Alivov, Q. Fan, Bo Xiao, 2006, SPIE OPTO.

Fermi level effect on strain of Si-doped GaN

James Tweedie, Zlatko Sitar, Seiji Mita, 2011, OPTO.

High reflectivity ultraviolet distributed Bragg reflector based on AlGaN/AlGaN multilayer

Hadis Morkoç, Ryoko Shimada, Jinqiao Xie, 2007, SPIE OPTO.

Ferroelectric field effect transistor with a double-gate structure on AlGaN/GaN heterostructures

Hadis Morkoç, Vitaliy Avrutin, Bo Xiao, 2009, OPTO.

ZnO hybrid microcavities grown by plasma assisted molecular beam epitaxy

Hadis Morkoç, Ryoko Shimada, Vitaliy Avrutin, 2008, SPIE OPTO.

On the efficiency droop in InGaN multiple quantum well blue light emitting diodes and its reduction with p-doped quantum well barriers

Hadis Morkoç, Xianfeng Ni, Ryoko Shimada, 2008 .

High internal quantum efficiency in AlGaN multiple quantum wells grown on bulk AlN substrates

Zlatko Sitar, Seiji Mita, Jinqiao Xie, 2015 .

On the origin of the 265 nm absorption band in AlN bulk crystals

Toru Kinoshita, Rafael Dalmau, Baxter Moody, 2012 .

Growth and Characterization of AlN and AlGaN Epitaxial Films on AlN Single Crystal Substrates

James Tweedie, Rafael Dalmau, Martin Feneberg, 2010, ECS Transactions.

Investigation of forward and reverse current conduction in GaN films by conductive atomic force microscopy

Hadis Morkoç, A. A. Baski, Jinqiao Xie, 2004 .

Structural and electrical properties of Pb(Zr,Ti)O3 grown on (0001) GaN using a double PbTiO3∕PbO bridge layer

Hadis Morkoç, Natalia Izyumskaya, Vitaliy Avrutin, 2007 .

Fabrication and current-voltage characterization of a ferroelectric lead zirconate titanate/AlGaN∕GaN field effect transistor

Sang-Jun Cho, Hadis Morkoç, Q. Fan, 2006 .

Thin-film GaN Schottky diodes formed by epitaxial lift-off

Patrick Fay, Edward Beam, Jinqiao Xie, 2017 .

Stimulated emission and optical gain in AlGaN heterostructures grown on bulk AlN substrates

Wei Guo, Zlatko Sitar, Seiji Mita, 2014 .

Temperature dependent photoluminescence of lateral polarity junctions of metal organic chemical vapor deposition grown GaN

James Tweedie, Zlatko Sitar, Ronny Kirste, 2011 .

Excitonic emission dynamics in homoepitaxial AlN films studied using polarized and spatio-time-resolved cathodoluminescence measurements

Zlatko Sitar, Kentaro Furusawa, Seiji Mita, 2013 .

Lasing and Longitudinal Cavity Modes in Photo-Pumped Deep Ultraviolet AlGaN Heterostructures

Wei Guo, Baxter Moody, Zlatko Sitar, 2013 .

High voltage, high current GaN-on-GaN p-n diodes with partially compensated edge termination

Patrick Fay, Lina Cao, Edward Beam, 2018, Applied Physics Letters.

I-V characteristics of Au∕Ni Schottky diodes on GaN with SiNx nanonetwork

Hadis Morkoç, Xianfeng Ni, S. Chevtchenko, 2006 .

The effect of AlN interlayer thicknesses on scattering processes in lattice-matched AlInN/GaN two-dimensional electron gas heterostructures

Ekmel Ozbay, Hadis Morkoç, Ümit Özgür, 2009 .

High electron mobility in nearly lattice-matched AlInN∕AlN∕GaN heterostructure field effect transistors

Hadis Morkoç, Xianfeng Ni, Ümit Özgür, 2007 .

Degradation in InAlN/GaN-based heterostructure field effect transistors: Role of hot phonons

Xing Li, Cagliyan Kurdak, Hadis Morkoç, 2009 .